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2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding最新文献

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Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition 化学气相沉积用于PCRAM的GexSbyTez薄膜的成分控制
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137082
T. Horiike, S. Hamada, T. Uno, H. Machida, M. Ishikawa, H. Sudo, Y. Ohshita, A. Ogura
{"title":"Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition","authors":"T. Horiike, S. Hamada, T. Uno, H. Machida, M. Ishikawa, H. Sudo, Y. Ohshita, A. Ogura","doi":"10.1109/NVMTS.2011.6137082","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137082","url":null,"abstract":"This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge2Sb2Te5 by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"310 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127488554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5 氮掺杂Ge2Sb2Te5的热导率测量
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137080
C. C. Tan, R. Zhao, Luping P. Shi, T. Chong, J. Bain, T. E. Schlesinger, J. Malen, W. Ong
{"title":"Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5","authors":"C. C. Tan, R. Zhao, Luping P. Shi, T. Chong, J. Bain, T. E. Schlesinger, J. Malen, W. Ong","doi":"10.1109/NVMTS.2011.6137080","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137080","url":null,"abstract":"The thermal conductivity of nitrogen-doped Ge2Sb2Te5 (N-GST) was analyzed using Frequency Domain Thermoreflectance (FDTR). The thermal conductivity of amorphous N-GST (∼0.15 W/m-K) was not found to change significantly as the nitrogen concentration was raised from 0 at% to ∼6 at%, possibly due to the huge amount of phonon scattering in the disordered films. The thermal conductivity of crystalline N-GST films was found to increase initially with increasing N content, but then to decrease upon further N addition. X-ray diffraction spectra of N-GST films show increasing defect density that correlates with the decrease in thermal conductivity of the crystalline films at higher nitrogen content.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123682118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cell-based models for the switching statistics of RRAM 基于单元的随机存储器开关统计模型
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137096
S. Long, C. Cagli, D. Ielmini, Ming Liu, J. Suñé
{"title":"Cell-based models for the switching statistics of RRAM","authors":"S. Long, C. Cagli, D. Ielmini, Ming Liu, J. Suñé","doi":"10.1109/NVMTS.2011.6137096","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137096","url":null,"abstract":"Departing from the percolation model of dielectric breakdown, we establish a framework of analysis and modeling of the resistive switching statistics in RRAM. A deterministic model for the RESET dynamics based on the thermal dissolution of the conductive filament (CF) is incorporated into simple geometrical cell-based models to construct a complete physics-based analytical model for the RESET statistics. This model nicely accounts for the experimental VRESET and IRESET distributions in relation to the size of the CF in Pt/NiO/W devices.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132647295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrical properties and microscopic structure of amorphous chalcogenides 无定形硫族化合物的电学性质和微观结构
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137101
D. Ielmini, A. Lacaita
{"title":"Electrical properties and microscopic structure of amorphous chalcogenides","authors":"D. Ielmini, A. Lacaita","doi":"10.1109/NVMTS.2011.6137101","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137101","url":null,"abstract":"The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114926165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Circuit design for 128Mb PCRAM based on 40nm technology 基于40nm技术的128Mb PCRAM电路设计
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137087
D. Cai, Houpeng Chen, Xi Li, Qian Wang, Zhitang Song
{"title":"Circuit design for 128Mb PCRAM based on 40nm technology","authors":"D. Cai, Houpeng Chen, Xi Li, Qian Wang, Zhitang Song","doi":"10.1109/NVMTS.2011.6137087","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137087","url":null,"abstract":"In this paper, a 128Mb phase change random access memory based on phase change Ge2Sb2Te5 alloy has been designed in 40nm 4 metal level CMOS technology. Memory cell is the dual trench epitaxial pn junction diode. According to the feature of the 1D1R memory cell structure, array architecture and chip architecture have been optimized. The read access time is 30ns in simulation. The layout area is 6.6mm × 3.8mm.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129237572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Overview of FeRAMs: Trends and perspectives feram概述:趋势和观点
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137107
D. Takashima
{"title":"Overview of FeRAMs: Trends and perspectives","authors":"D. Takashima","doi":"10.1109/NVMTS.2011.6137107","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137107","url":null,"abstract":"In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116708173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A novel read-while-write (RWW) algorithm for phase change memory 一种新的相变存储器边写边读算法
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137084
Ding Sheng, Song Zhitang, Chen Houpeng
{"title":"A novel read-while-write (RWW) algorithm for phase change memory","authors":"Ding Sheng, Song Zhitang, Chen Houpeng","doi":"10.1109/NVMTS.2011.6137084","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137084","url":null,"abstract":"A novel read-while-write (RWW) algorithm for phase change memory (PCM) is proposed. It performs the verify operation for last cell, the write operation for current cell and the pre-read operation for next cell simultaneously. Therefore, it can reduce the timing cost by the data-comparison write (DCW) algorithm and the program & verify (P&V) algorithm. The performance analysis and simulation results show that the percent of saving timing by RWW is >22.6%.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121763215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel bipolar TaOx-based Resistive Random Access Memory 新型双极陶氏阻性随机存取存储器
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137095
Wenjuan Wu, X. Tong, R. Zhao, Luping P. Shi, Hongxin Yang, Y. Yeo
{"title":"Novel bipolar TaOx-based Resistive Random Access Memory","authors":"Wenjuan Wu, X. Tong, R. Zhao, Luping P. Shi, Hongxin Yang, Y. Yeo","doi":"10.1109/NVMTS.2011.6137095","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137095","url":null,"abstract":"In this paper, we report a novel Cr/TaOx/Al (top to bottom) Resistive Random Access Memory (RRAM) which works as a bipolar switching device. The RRAM devices have demonstrated excellent memory performance including small magnitude of switching voltages (about 2 V), a tight distribution of Vset and Vreset, low switching current, large off/on resistance ratio R of up to 107, and good retention characteristics (more than 105 s) at high temperature (120°C). Resistance of both states shows little degradation, and retention characteristics can be extrapolated to 10 years. The relationship between active area and resistance at low resistance state is studied and the switching appears to be a local phenomenon which is likely to be of the filament type. Forming gas anneal has an additional positive effect on the device performance parameters, as it leads to smaller magnitude of switching voltages and better uniformity of the resistance in the high resistance state.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116335656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of OxRAM cell variability impact on memory performances through electrical simulations 通过电模拟评估OxRAM细胞可变性对内存性能的影响
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137089
H. Aziza, M. Bocquet, J. Portal, C. Muller
{"title":"Evaluation of OxRAM cell variability impact on memory performances through electrical simulations","authors":"H. Aziza, M. Bocquet, J. Portal, C. Muller","doi":"10.1109/NVMTS.2011.6137089","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137089","url":null,"abstract":"An investigation in the impact of Oxide-based Resistive Memory RAM devices (OxRRAM) variability on the memory array performances is proposed. Variability in advanced IC designs has emerged as a roadblock and significant efforts of process and design engineers are required to decrease its impact. This is especially true for OxRRAM memory, combining high level of integration with exotic materials. In this study, electrical simulations, based on an OxRRAM compact model, are performed at a circuit level. Simulation results are analyzed in terms of OxRRAM cells electrical characteristic variations to evaluate the robustness of the memory array.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127371618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
High performance charge-trapping flash memory with highly-scaled trapping layer 具有高尺度捕获层的高性能电荷捕获快闪存储器
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137106
A. Chin, C. Tsai, Hong Wang
{"title":"High performance charge-trapping flash memory with highly-scaled trapping layer","authors":"A. Chin, C. Tsai, Hong Wang","doi":"10.1109/NVMTS.2011.6137106","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137106","url":null,"abstract":"We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si<inf>3</inf>N<inf>4</inf>-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10<sup>6</sup> cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132558034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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