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2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding最新文献

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Evaluation of OxRAM cell variability impact on memory performances through electrical simulations 通过电模拟评估OxRAM细胞可变性对内存性能的影响
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137089
H. Aziza, M. Bocquet, J. Portal, C. Muller
{"title":"Evaluation of OxRAM cell variability impact on memory performances through electrical simulations","authors":"H. Aziza, M. Bocquet, J. Portal, C. Muller","doi":"10.1109/NVMTS.2011.6137089","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137089","url":null,"abstract":"An investigation in the impact of Oxide-based Resistive Memory RAM devices (OxRRAM) variability on the memory array performances is proposed. Variability in advanced IC designs has emerged as a roadblock and significant efforts of process and design engineers are required to decrease its impact. This is especially true for OxRRAM memory, combining high level of integration with exotic materials. In this study, electrical simulations, based on an OxRRAM compact model, are performed at a circuit level. Simulation results are analyzed in terms of OxRRAM cells electrical characteristic variations to evaluate the robustness of the memory array.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127371618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Hybrid SSD with PCM 混合固态硬盘与PCM
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137103
Yining Liu, Chuangshi Zhou, Xiaohua Cheng
{"title":"Hybrid SSD with PCM","authors":"Yining Liu, Chuangshi Zhou, Xiaohua Cheng","doi":"10.1109/NVMTS.2011.6137103","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137103","url":null,"abstract":"Solid-State Drive, popularly known as SSD is now widely used in computer system and industry. This is a new type of memory which is smaller and lighter as compared to HDD. During a “clean” shutdown, most host systems, initiate a command (the STANDBY IMMEDIATE command) to an SSD to give the SSD enough time to prepare for the shutdown. This allows the SSD to save data currently in transition (in temporary buffers) to the non-volatile NAND media. However, during an unsafe power shutdown, the SSD abruptly loses power before the host system can initiate the STANDBY IMMEDIATE command. This prevents data in the temporary buffers from being saved in the non-volatile NAND. In this paper, we advance two new hybrid SSD architectures which are composed of PCM and NAND Flash. In these architectures, data loss during unplanned power shutdown can be avoided.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116440278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simulation of novel phase change memory cell with Titanium Nitride heating layer 氮化钛加热层相变记忆电池的模拟
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137086
Xiaofeng Du, S. Song, Zhitang Song, Weili Liu, Yuefeng Gong, Yifeng Gu
{"title":"Simulation of novel phase change memory cell with Titanium Nitride heating layer","authors":"Xiaofeng Du, S. Song, Zhitang Song, Weili Liu, Yuefeng Gong, Yifeng Gu","doi":"10.1109/NVMTS.2011.6137086","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137086","url":null,"abstract":"A novel phase-change memory cell with a heating layer structure (HLS) was proposed in this work. By having an additional Titanium Nitride (TiN) layer under the bottom electrode, the heat loss can be effectively prevented. A three-dimensional finite element model for phase change memory (PCM) is established to simulate thermal and electrical behaviors. Compared with the traditional structure (TS) PCM cell, the simulation results indicate that the HLS has advantages of increasing the heating efficiency and reducing the heat loss. The thermal effect of the access device of PCM is also simulated and the HLS offers a higher driving current because of a higher temperature in the device region. Therefore, the HLS cell will be propitious for developing the PCRAM with low power consumption and high integration.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122071492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films InGaZnO薄膜非易失性电阻记忆开关行为研究
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137093
Min-Chen Chen, T. Chang, Sheng-Yao Huang, S. Sze, M. Tsai
{"title":"Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films","authors":"Min-Chen Chen, T. Chang, Sheng-Yao Huang, S. Sze, M. Tsai","doi":"10.1109/NVMTS.2011.6137093","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137093","url":null,"abstract":"In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through Pt/IGZO/TiN devices, which perform the unipolar and bipolar behavior while applying bias on Pt and TiN electrode, respectively. In comparison with Ti/IGZO/TiN device, the electrical characteristic of Pt/IGZO/TiN device can be affected by the oxygen content in the sputtering gas mixture of IGZO film. Experimental results demonstrate that the switching behavior is selective by using proper electrode.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129511437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories 从电介质失效到记忆功能:从氧化物击穿中学习，以提高对电阻开关记忆的理解
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137105
J. Suñé, E. Miranda, D. Jiménez, S. Long, Ming Liu
{"title":"From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories","authors":"J. Suñé, E. Miranda, D. Jiménez, S. Long, Ming Liu","doi":"10.1109/NVMTS.2011.6137105","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137105","url":null,"abstract":"Dielectric breakdown (BD) of thin gate insulators has been studied for decades due to its importance for CMOS reliability forecast and technology qualification. On the other hand, resistive switching (RS) phenomena such as threshold switching (TS) and memory switching (MS) are at the basics of promising post-NAND non-volatile memories such as phase-change memories (PCM) and resistive memories (RRAM). Many of these devices are based on the ON/OFF switching of a localized conducting filament (CF) which is created by a soft-breakdown event occurring during electroforming. Thus, many findings concerning the BD physics might be useful to improve our understanding of RS and be of great help for the development of new non-volatile memory technologies. In this work, we focus on three different areas where a link can be established between BD and RS: 1) the post-BD conduction properties and its relation to quantum-wire conduction in both TS and MS; 2) the application of the cell-based percolation model of the breakdown to the description of the resistive switching statistics; and 3) the application of the successive BD statistics to deal with the statistics of multiple CFs in RRAM devices which is related to a possible endurance limit.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nonvolatile memories with controllable nanogap structures 具有可控纳米间隙结构的非易失性存储器
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137091
S. Furuta, Y. Masuda, Tsuyoshi Takahashi, S. Kumaragurubaran, M. Ono, H. Suga, Y. Naitoh, Tetsuo Shimizu
{"title":"Nonvolatile memories with controllable nanogap structures","authors":"S. Furuta, Y. Masuda, Tsuyoshi Takahashi, S. Kumaragurubaran, M. Ono, H. Suga, Y. Naitoh, Tetsuo Shimizu","doi":"10.1109/NVMTS.2011.6137091","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137091","url":null,"abstract":"As one of the candidates of a next-generation memory, we study the memory element using resistance change of the metal nanogap. Since this element has many advantages, for example, quite simple structure, wide material selectivity, highspeed operation, and high temperature tolerance. In this report, miniaturization and mass production, vertical type nanogap elements were developed. As a result of measurements, the characteristic of vertical type is better than the element of lateral type. Moreover, we discuss switching speed of the elements. We confirmed that the switching speed is at least below 50 ns. This is certain progress towards practical use.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123317205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films 高介电常数和铁电薄膜中场相关载流子迁移率和介电常数对空间电荷限制泄漏电流特性的影响
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137088
Y. G. Xiao, M. Tang, J. C. Li
{"title":"The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films","authors":"Y. G. Xiao, M. Tang, J. C. Li","doi":"10.1109/NVMTS.2011.6137088","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137088","url":null,"abstract":"Taking into account the electric field dependence of carrier mobility and permittivity, the current-voltage relationship dominated by space-charge-limited conduction for high dielectric constant ferroelectric thin films, consisting of (Ba, Sr)TiO3 and Pb(Zr, Ti)O3 is derived. Typical current-voltage characteristics are given by the derived relationship with empirical values for its parameters. The obtained current characteristics effectively account for the high-field current characteristics including the quasi-Ohmic region and the small power exponent law region in the electric field ranging from 106 V/cm to 107 V/cm observed experimentally in a very thin BaTiO3 single crystal in a previous study [Appl. Phys. Lett. 86 (2005) 152903].","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125458569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application 用于快闪存储器的原子层沉积衍生的全高基结构的特性
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137098
Y. Y. Fu, A. Li, X. Liu, X. F. Li, D. Wu, Z. J. Tang
{"title":"Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application","authors":"Y. Y. Fu, A. Li, X. Liu, X. F. Li, D. Wu, Z. J. Tang","doi":"10.1109/NVMTS.2011.6137098","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137098","url":null,"abstract":"A charge trapping flash memory using amorphous Al<inf>2</inf>O<inf>3</inf> as the tunneling layer, La-doped HfO<inf>2</inf> films as the charge trapping layer and pure HfO<inf>2</inf> as the blocking layer was fabricated and investigated. X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and transmission electron microscopic (TEM) were used to characterize the structures and microstructures. The HfO<inf>2</inf>/ (HfO<inf>2</inf>)<inf>0.75</inf>(La<inf>2</inf>O<inf>3</inf>)<inf>0.25</inf>(HLO) /Al<inf>2</inf>O<inf>3</inf>/Si stack annealed at 800 °C shows distinct interface and nanocrystals in charge trapping layer. The electrical characteristics and charge storage properties of the HfO<inf>2</inf>/ HLO/Al<inf>2</inf>O<inf>3</inf>/Si stack were also evaluated. The HfO<inf>2</inf>/ HLO/Al<inf>2</inf>O<inf>3</inf>/Si stack annealed at 800 °C exhibits a large memory window (9V at ±11 V, 1 s).","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133633320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations 用于电路仿真的三维圆柱形栅极场效应管的内、外非对称性建模
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137100
S. Venugopalan, Y. Chauhan, D. Lu, M. A. Karim, A. Niknejad, C. Hu
{"title":"Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations","authors":"S. Venugopalan, Y. Chauhan, D. Lu, M. A. Karim, A. Niknejad, C. Hu","doi":"10.1109/NVMTS.2011.6137100","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137100","url":null,"abstract":"In a vertical cylindrical gate transistor, we identify doping gradation along channel and structural difference in electrode regions as major reasons for highly asymmetric drain current characteristics. These effects have been captured in a physical manner in a SPICE model. Calibration results of such a model to silicon device data from a vertical cylindrical gate technology that exhibits asymmetric I-V characteristics is presented for the first time.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132341531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fast pulse analysis of TiO2 based RRAM nano-crossbar devices TiO2基RRAM纳米横条器件的快速脉冲分析
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137092
C. Hermes, F. Lentz, R. Waser, R. Bruchhaus, S. Menzel, K. Fleck, U. Bottger, M. Wimmer, M. Salinga, M. Wuttig
{"title":"Fast pulse analysis of TiO2 based RRAM nano-crossbar devices","authors":"C. Hermes, F. Lentz, R. Waser, R. Bruchhaus, S. Menzel, K. Fleck, U. Bottger, M. Wimmer, M. Salinga, M. Wuttig","doi":"10.1109/NVMTS.2011.6137092","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137092","url":null,"abstract":"Switchable metal-insulator-metal (MIM) structures are the key elements for future non-volatile resistive RAM (RRAM) devices. Recently this type of memory device has attracted considerable interest due to the prospect of non-volatile data storage combined with low power consumption, excellent scalability and very fast write/read operation. However the physical processes responsible for the fast resistive switching are still under investigation. In this work we will present the replacement of the time consuming quasi-static current driven electroforming process by short voltage pulse induced electroforming. Furthermore resistive switching was measured with voltage pulses down to 5 ns pulse width with an in-situ recording of the current response. The high-frequency measurements provide a deeper insight into the physical background of fast data operation.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132384500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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