Y. Y. Fu, A. Li, X. Liu, X. F. Li, D. Wu, Z. J. Tang
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引用次数: 1
Abstract
A charge trapping flash memory using amorphous Al2O3 as the tunneling layer, La-doped HfO2 films as the charge trapping layer and pure HfO2 as the blocking layer was fabricated and investigated. X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and transmission electron microscopic (TEM) were used to characterize the structures and microstructures. The HfO2/ (HfO2)0.75(La2O3)0.25(HLO) /Al2O3/Si stack annealed at 800 °C shows distinct interface and nanocrystals in charge trapping layer. The electrical characteristics and charge storage properties of the HfO2/ HLO/Al2O3/Si stack were also evaluated. The HfO2/ HLO/Al2O3/Si stack annealed at 800 °C exhibits a large memory window (9V at ±11 V, 1 s).
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