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2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding最新文献

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Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials 相变磁性材料的结晶度及其对物理和磁性能的影响
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137109
J. C. Huang, W. Song, L. P. Shi, R. Zhao, T. Chong, J. Bain, T. E. Schlesinger
{"title":"Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials","authors":"J. C. Huang, W. Song, L. P. Shi, R. Zhao, T. Chong, J. Bain, T. E. Schlesinger","doi":"10.1109/NVMTS.2011.6137109","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137109","url":null,"abstract":"Films of crystalline and amorphous Fe<inf>12</inf>(Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)<inf>88</inf> were prepared using laser synthesis from a stoichiometric target. The crystalline film, prepared at 300 °C was found to be in the hexagonal close packed (HCP) structure while the film prepared at room temperature was found to be amorphous. The crystalline film showed clear magnetic hysteresis, while the amorphous and the 220 °C prepared film exhibited weaker magnetic properties. The crystallization temperature of the amorphous Fe<inf>12</inf>(Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)<inf>88</inf> as extracted from resistance temperature measurements was found to be 168 °C, comparable to 178 °C for pure Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>. Lastly, the reflectivity spectrum showed the typical reflectivity contrast between crystalline or amorphous Fe<inf>12</inf>(Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)<inf>88</inf> films — as expected from phase change films.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128142540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spin-RAM for Normally-Off Computer 用于正常关闭计算机的旋转ram
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137104
K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. Ozeki, D. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani
{"title":"Spin-RAM for Normally-Off Computer","authors":"K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. Ozeki, D. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani","doi":"10.1109/NVMTS.2011.6137104","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137104","url":null,"abstract":"Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"C-17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126763346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Investigation of resistive switching properties in Sm2O3 memory devices Sm2O3存储器件阻性开关特性研究
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137094
Sheng-Yao Huang, T. Chang, Min-Chen Chen, S. Sze, M. Tsai
{"title":"Investigation of resistive switching properties in Sm2O3 memory devices","authors":"Sheng-Yao Huang, T. Chang, Min-Chen Chen, S. Sze, M. Tsai","doi":"10.1109/NVMTS.2011.6137094","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137094","url":null,"abstract":"The resistance switching behavior has been reported in various materials, including perovskite oxides, transition metal oxides, organics, etc. Among these materials, it is interesting to investigate the RRAMs device based on high-k materials, which are appropriate to integration with CMOS process in the future. Samarium oxide (Sm2O3) is one of important rare earth oxide materials. It has been investigated as high-k materials to substitute SiO2 in CMOS device. Hence, this study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio after 104 cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 30°C.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"67 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126018724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MOCVD GST for high speed and low current Phase Change Memory 用于高速和低电流相变存储器的MOCVD GST
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137102
J. Zheng, P. Chen, W. Hunks, W. Li, J. Cleary, J. Reed, J. Ricker, W. Czubatyj, C. Schell, R. Sandoval, S. Hudgens, C. Dennison, T. Lowrey
{"title":"MOCVD GST for high speed and low current Phase Change Memory","authors":"J. Zheng, P. Chen, W. Hunks, W. Li, J. Cleary, J. Reed, J. Ricker, W. Czubatyj, C. Schell, R. Sandoval, S. Hudgens, C. Dennison, T. Lowrey","doi":"10.1109/NVMTS.2011.6137102","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137102","url":null,"abstract":"MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high performance PCM (Phase Change Memory) applications. Our MOCVD process allows GST alloys to fill 15nm hole structures. By tailoring the MOCVD process and GST compositions, MOCVD GST alloys exhibit superior material properties compared to Ge2Sb2Te 5 PVD (Physical Vapor Deposition) alloys in terms of higher device speeds and lower reset currents. PCM devices made from optimized MOCVD GST alloys demonstrate set-speed of 12ns in ∼100nm size devices, which is more than 10X faster than the typical 150–200ns set-speed observed for devices of similar size made from benchmark PVD Ge2Sb2Te5 alloys. PCM devices made from the 12ns high speed GST alloys by the MOCVD process also exhibit programming cycle endurances greater than 5×108 at a 20ns set time. In addition, devices made from MOCVD GST alloys can also be made to have ∼3X lower reset currents than devices made from PVD GST alloy of same compositions.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"75 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114087111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Materials engineering for Phase Change Random Access Memory 相变随机存取存储器的材料工程
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137090
S. Raoux, Huai-Yu Cheng, J. Sandrini, Jing Li, J. Jordan-Sweet
{"title":"Materials engineering for Phase Change Random Access Memory","authors":"S. Raoux, Huai-Yu Cheng, J. Sandrini, Jing Li, J. Jordan-Sweet","doi":"10.1109/NVMTS.2011.6137090","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137090","url":null,"abstract":"Crystallization properties of the phase change materials GeSbxTe and GexSb2Te were studied. For GeSbxTe we found that for large x = 6 the crystallization was very fast but crystallization temperature was low while for small x = 1 crystallization was slow but crystallization temperature was high. An alloy with a good compromise between crystallization time and temperature can be found at x = 4.6, with still very fast crystallization (about 50 ns) and high crystallization temperature of 200 ºC. Time resolved x-ray ray diffraction shows that these alloys crystallize in a single rhombohedral phase similar to Sb. For GexSb2Te we found that alloys richer in Ge have higher crystallization temperatures. Ge-rich alloys also have higher resistances in the amorphous phase and a larger electrical contrast. They crystallize in the hexagonal Sb2Te phase. For both materials system alloys with the highest Ge content show the appearance of the Ge(111) diffraction peak indicative of elemental segregation.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128357127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions 等离子体氧离子预处理对TANOS性能的优化
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137097
Zhongguang Xu, Z. Huo, Chenxin Zhu, Jing Liu, Ming Liu
{"title":"Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions","authors":"Zhongguang Xu, Z. Huo, Chenxin Zhu, Jing Liu, Ming Liu","doi":"10.1109/NVMTS.2011.6137097","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137097","url":null,"abstract":"In this paper, we proposed an additional post-deposition annealing PDA processes by inserting a pre-treatment before high temperature annealing in N<inf>2</inf> ambience, which has been demonstrated to efficiently optimize the performance of Metal/Al<inf>2</inf>O<inf>3</inf>/Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si (MANOS) devices. By using low-energy plasma oxygenic ions bombardment to the surface of ONA stack, the retention and erase speed obtain a better tradeoff compared to those annealed only in N<inf>2</inf> ambience. Metal/Al<inf>2</inf>O<inf>3</inf>/SiO<inf>2</inf>/Si (MAOS) structures without trapping layer are also fabricated to investigate the impact on the Al<inf>2</inf>O<inf>3</inf> film under various PDA conditions for further understanding the mechanism for the improved performance. The result indicates that the pre-treatment can reduce oxygen vacancies in the Al<inf>2</inf>O<inf>3</inf> film, which can effectively improve the breakdown voltage and decrease leakage current.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127397232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical and electrical characteristics for Si-doped GeSb9 phase-change memory 掺硅GeSb9相变存储器的物理和电学特性
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137081
Y. Perng, Shu-Yu Lin, W. Y. Lai, L. Chou
{"title":"Physical and electrical characteristics for Si-doped GeSb9 phase-change memory","authors":"Y. Perng, Shu-Yu Lin, W. Y. Lai, L. Chou","doi":"10.1109/NVMTS.2011.6137081","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137081","url":null,"abstract":"A phase-change random access memory device, consisting of GeSb9 based chalcogenide, TiW electrode and SiO2 dielectric layer, was fabricated in order to investigate the electrical characteristic and failure mechanism. Amorphous Si-doped GeSb9 with high crystallization temperature (235°C) exhibits extremely good thermal stability. Ten year data retention of 164°C shows the remarkable device reliability. After the continuous voltage sweeping of 1.6 V, an unexpected failure was observed via transmission electron microscopy (TEM) image. The failure mechanism was clarified and Si-doped GeSb9 based PRAM material is concluded to be potential in virtue of its improved device reliability and thermal stability.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132461026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase change and optical band gap behavior of Ge-Zn-Te chalcogenide films Ge-Zn-Te硫系薄膜的相变及光学带隙行为
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137083
Guoxiang Wang, Q. Nie, X. Shen, T. Xu, S. Dai
{"title":"Phase change and optical band gap behavior of Ge-Zn-Te chalcogenide films","authors":"Guoxiang Wang, Q. Nie, X. Shen, T. Xu, S. Dai","doi":"10.1109/NVMTS.2011.6137083","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137083","url":null,"abstract":"Glassy alloys with composition of Ge20ZnxTe80-x (x=0, 5, 10, 15at%) were prepared by conventional melt-quenching method, which were subsequently used as target for thermal evaporation (TE) technique under vacuum. The Ge-Te-Zn chalcogenide thin films were characterized with XRD and Transmittance spectra. XRD measurements indicate that there is an amorphous-to-crystalline phase transition. The GeTe crystallines were suppressed in the film with x=5 after annealing while the GeTe crystallines become predominant and the formation of Te crystallines were suppressed with Zn content increasing. Optical band gap is estimated using Tauc's extrapolation and is found to decrease from 0.509 to 0.395eV in as-deposited films with x=0, 5, 10., while the optical band gap increases to 0.555eV in as-deposited films with x=15. The similar behavior is also observed in the annealed films. A comparison of optical band gap of various films illustrates the thermally-induced effects.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132760483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device model of phase change memory 相变存储器的器件模型
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI: 10.1109/NVMTS.2011.6137085
Yuefeng Gong, F. Rao, Zhitang Song
{"title":"Device model of phase change memory","authors":"Yuefeng Gong, F. Rao, Zhitang Song","doi":"10.1109/NVMTS.2011.6137085","DOIUrl":"https://doi.org/10.1109/NVMTS.2011.6137085","url":null,"abstract":"Phase change memory (PCM) is considered to be one of the best candidates for next-generation non-volatile memories. A three-dimension finite element model for PCM is established to simulate electric, thermal, stress and phase state distribution during RESET and SET operation. The impact of thermal on device cell design and optimization is investigated. The simulation results have been used as a guideline of the optimum design for low power consumption and high speed.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125461737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Copyright page 版权页
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 1900-01-01 DOI: 10.1109/pet.2004.1393774
{"title":"Copyright page","authors":"","doi":"10.1109/pet.2004.1393774","DOIUrl":"https://doi.org/10.1109/pet.2004.1393774","url":null,"abstract":"","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129170510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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