Zhongguang Xu, Z. Huo, Chenxin Zhu, Jing Liu, Ming Liu
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引用次数: 1
Abstract
In this paper, we proposed an additional post-deposition annealing PDA processes by inserting a pre-treatment before high temperature annealing in N2 ambience, which has been demonstrated to efficiently optimize the performance of Metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. By using low-energy plasma oxygenic ions bombardment to the surface of ONA stack, the retention and erase speed obtain a better tradeoff compared to those annealed only in N2 ambience. Metal/Al2O3/SiO2/Si (MAOS) structures without trapping layer are also fabricated to investigate the impact on the Al2O3 film under various PDA conditions for further understanding the mechanism for the improved performance. The result indicates that the pre-treatment can reduce oxygen vacancies in the Al2O3 film, which can effectively improve the breakdown voltage and decrease leakage current.
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