T. Horiike, S. Hamada, T. Uno, H. Machida, M. Ishikawa, H. Sudo, Y. Ohshita, A. Ogura
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Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition
This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge2Sb2Te5 by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.
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