{"title":"High performance charge-trapping flash memory with highly-scaled trapping layer","authors":"A. Chin, C. Tsai, Hong Wang","doi":"10.1109/NVMTS.2011.6137106","DOIUrl":null,"url":null,"abstract":"We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si<inf>3</inf>N<inf>4</inf>-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10<sup>6</sup> cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2011.6137106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si3N4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 106 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.
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