{"title":"无定形硫族化合物的电学性质和微观结构","authors":"D. Ielmini, A. Lacaita","doi":"10.1109/NVMTS.2011.6137101","DOIUrl":null,"url":null,"abstract":"The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical properties and microscopic structure of amorphous chalcogenides\",\"authors\":\"D. Ielmini, A. Lacaita\",\"doi\":\"10.1109/NVMTS.2011.6137101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.\",\"PeriodicalId\":197829,\"journal\":{\"name\":\"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2011.6137101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2011.6137101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical properties and microscopic structure of amorphous chalcogenides
The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.
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