{"title":"feram概述:趋势和观点","authors":"D. Takashima","doi":"10.1109/NVMTS.2011.6137107","DOIUrl":null,"url":null,"abstract":"In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Overview of FeRAMs: Trends and perspectives\",\"authors\":\"D. Takashima\",\"doi\":\"10.1109/NVMTS.2011.6137107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.\",\"PeriodicalId\":197829,\"journal\":{\"name\":\"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2011.6137107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2011.6137107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
