一种新的相变存储器边写边读算法

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding Pub Date : 2011-11-01 DOI:10.1109/NVMTS.2011.6137084

Ding Sheng, Song Zhitang, Chen Houpeng

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引用次数: 0

摘要

提出了一种新的相变存储器(PCM)的边写边读算法。它同时执行对最后一个单元格的验证操作，对当前单元格的写入操作和对下一个单元格的预读操作。因此，采用数据比较写入(DCW)算法和程序验证(P&V)算法可以降低时序开销。性能分析和仿真结果表明，RWW节省时间的百分比>22.6%。

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A novel read-while-write (RWW) algorithm for phase change memory

A novel read-while-write (RWW) algorithm for phase change memory (PCM) is proposed. It performs the verify operation for last cell, the write operation for current cell and the pre-read operation for next cell simultaneously. Therefore, it can reduce the timing cost by the data-comparison write (DCW) algorithm and the program & verify (P&V) algorithm. The performance analysis and simulation results show that the percent of saving timing by RWW is >22.6%.

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2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding

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