International Conference on Microelectronic Test Structures最新文献_第4页

A novel approach for reducing the area occupied by contact pads on process control chips 一种减少过程控制芯片上触点片所占面积的新方法

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67883

A. Walton, W. Gammie, D. Morrow, J. Stevenson, R. Holwill

引用次数: 17

Electrical characterization of 2-D doping profiles 二维掺杂谱的电特性

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67871

G. Ouwerling, J. Staalenburg, M. Kleefstra

引用次数: 1

A new extraction method for effective channel length on lightly doped drain MOSFET's 轻掺杂漏极MOSFET有效沟道长度的新提取方法

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67890

J. Ida, A. Kita, F. Ichikawa

引用次数: 16

Test structure data classification using a directed graph approach 使用有向图方法测试结构数据分类

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67902

M. Cresswell, D. Khera, L. W. Linholm, C. E. Schuster

引用次数: 1

Flange correction to four-terminal contact resistance measurements 四端接触电阻测量的法兰校正

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67875

U. Lieneweg, D. Hannaman

引用次数: 2

Transmission line model test structure with four or more terminals: a novel method to characterize non-ideal planar ohmic contacts in presence of inhomogeneities 具有四个或更多端子的传输线模型测试结构:一种表征存在不均匀性的非理想平面欧姆接触的新方法

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67874

L. Gutai

{"title":"Transmission line model test structure with four or more terminals: a novel method to characterize non-ideal planar ohmic contacts in presence of inhomogeneities","authors":"L. Gutai","doi":"10.1109/ICMTS.1990.67874","DOIUrl":"https://doi.org/10.1109/ICMTS.1990.67874","url":null,"abstract":"The most widely used test procedures for electrical contact characterization are the Kelvin cross bridge resistor method, the transmission line model (TLM) test structure and their combination, which produces a six-terminal Kelvin structure. These structures measure the specific contact resistance (contact resistivity) and the semiconductor sheet resistance beneath the contact. A modified TLM structure combined with a particular evaluation method makes it possible to use the TLM method on wafers with high levels of inhomogeneities. The two independent procedures used to derive the modified method are statistical simulation and propagation of error. Statistical modeling and experimental data show that if inhomogeneities are present, electrical contact parameter extraction by conventional TLM test structures results in large errors or does not yield results at all. However, the errors in the extracted parameters can be reduced considerably using the modified TLM test method with four terminals and a data extraction method. When five terminals are used, the accuracy of the parameter extraction can also be determined by a single structure allowing separation of the die-level and wafer-level inhomogeneities.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129646198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linewidth and step resistance distribution measurements using an addressable array 使用可寻址阵列测量线宽和阶跃电阻分布

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI: 10.1109/ICMTS.1990.67885

H. Sayah, M. Buehler

引用次数: 13