{"title":"轻掺杂漏极MOSFET有效沟道长度的新提取方法","authors":"J. Ida, A. Kita, F. Ichikawa","doi":"10.1109/ICMTS.1990.67890","DOIUrl":null,"url":null,"abstract":"An extraction method for an effective channel length (L/sub eff/) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L/sub eff/ is obtained by the linear extrapolation of the gate-bias-dependent L/sub eff/ to the threshold voltage. In order to clear the difference of the gate bias dependence of the L/sub eff/ among various LDD structures, the LDDs are examined with experiments and simulations. The L/sub eff/ of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L/sub eff/ obtained by the method is used.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A new extraction method for effective channel length on lightly doped drain MOSFET's\",\"authors\":\"J. Ida, A. Kita, F. Ichikawa\",\"doi\":\"10.1109/ICMTS.1990.67890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An extraction method for an effective channel length (L/sub eff/) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L/sub eff/ is obtained by the linear extrapolation of the gate-bias-dependent L/sub eff/ to the threshold voltage. In order to clear the difference of the gate bias dependence of the L/sub eff/ among various LDD structures, the LDDs are examined with experiments and simulations. The L/sub eff/ of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L/sub eff/ obtained by the method is used.<<ETX>>\",\"PeriodicalId\":196449,\"journal\":{\"name\":\"International Conference on Microelectronic Test Structures\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.67890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new extraction method for effective channel length on lightly doped drain MOSFET's
An extraction method for an effective channel length (L/sub eff/) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L/sub eff/ is obtained by the linear extrapolation of the gate-bias-dependent L/sub eff/ to the threshold voltage. In order to clear the difference of the gate bias dependence of the L/sub eff/ among various LDD structures, the LDDs are examined with experiments and simulations. The L/sub eff/ of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L/sub eff/ obtained by the method is used.<>
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