A new extraction method for effective channel length on lightly doped drain MOSFET's

Abstract

An extraction method for an effective channel length (L/sub eff/) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L/sub eff/ is obtained by the linear extrapolation of the gate-bias-dependent L/sub eff/ to the threshold voltage. In order to clear the difference of the gate bias dependence of the L/sub eff/ among various LDD structures, the LDDs are examined with experiments and simulations. The L/sub eff/ of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L/sub eff/ obtained by the method is used.<>