四端接触电阻测量的法兰校正

International Conference on Microelectronic Test Structures Pub Date : 1990-03-05 DOI:10.1109/ICMTS.1990.67875

U. Lieneweg, D. Hannaman

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引用次数: 2

摘要

提出了一种启发式模型，用于对半导体与金属层之间或金属层之间的方形接触中界面电阻的四端测量进行法兰修正。当拟合一个恒定的界面电阻率时，该模型再现了几何变化的实验结果，并与模拟结果相比较

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Flange correction to four-terminal contact resistance measurements

A heuristic model for flange correction to four-terminal measurements of the interfacial resistance in square contacts between a semiconducting and a metal layer, or between metal layers is presented. The model reproduces results from experiments with geometric variations when a constant interfacial resistivity is fitted, and compares well to simulations.<>

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来源期刊

International Conference on Microelectronic Test Structures

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