二维掺杂谱的电特性

G. Ouwerling, J. Staalenburg, M. Kleefstra
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引用次数: 1

摘要

讨论了电容-电压(C-V)法等传统电掺杂分析方法向二维掺杂分析的扩展。提出了合适的试验结构。测量数据通过反向建模进行解释,从而最大限度地减少了测量电数据与使用掺杂剖面参数化模型模拟的测量数据之间的差异。给出了结电荷耦合器件(CCD)中二维掺杂谱图的实验结果。简要讨论了逆建模技术在一般意义上的器件参数提取中的应用
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical characterization of 2-D doping profiles
The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<>
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