{"title":"二维掺杂谱的电特性","authors":"G. Ouwerling, J. Staalenburg, M. Kleefstra","doi":"10.1109/ICMTS.1990.67871","DOIUrl":null,"url":null,"abstract":"The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical characterization of 2-D doping profiles\",\"authors\":\"G. Ouwerling, J. Staalenburg, M. Kleefstra\",\"doi\":\"10.1109/ICMTS.1990.67871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<<ETX>>\",\"PeriodicalId\":196449,\"journal\":{\"name\":\"International Conference on Microelectronic Test Structures\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.67871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characterization of 2-D doping profiles
The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<>