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1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference最新文献

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A compendium of recent total dose data on bipolar linear microcircuits 双极线性微电路最近的总剂量数据汇编
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574185
R. Pease, W. Combs, A. Johnston, T. Carrière, C. Poivey, A. Gach, S. McClure
{"title":"A compendium of recent total dose data on bipolar linear microcircuits","authors":"R. Pease, W. Combs, A. Johnston, T. Carrière, C. Poivey, A. Gach, S. McClure","doi":"10.1109/REDW.1996.574185","DOIUrl":"https://doi.org/10.1109/REDW.1996.574185","url":null,"abstract":"Many conventional bipolar linear microcircuits used in space systems have shown a dose rate sensitivity to total dose degradation. Dose rate data, taken by several agencies, have been combined and presented in terms of sensitive parameter shifts at a fixed dose and dose rate enhancements factors.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128259048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Dose rate and total dose noise performance of a commercial off the shelf dielectrically isolated JFET operational amplifier during irradiation 商用现成介质隔离JFET运算放大器辐照期间的剂量率和总剂量噪声性能
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574181
D. Hiemstra
{"title":"Dose rate and total dose noise performance of a commercial off the shelf dielectrically isolated JFET operational amplifier during irradiation","authors":"D. Hiemstra","doi":"10.1109/REDW.1996.574181","DOIUrl":"https://doi.org/10.1109/REDW.1996.574181","url":null,"abstract":"The noise performance in a dose rate environment of a dielectrically isolated JFET operational amplifier at the onset of irradiation and with respect to total dose is presented. Comparison to previously reported results are made.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115779107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radiation effects in analog CMOS analog-to-digital converters 模拟CMOS模数转换器中的辐射效应
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574182
T. Turflinger, M. Davey, J. Bings
{"title":"Radiation effects in analog CMOS analog-to-digital converters","authors":"T. Turflinger, M. Davey, J. Bings","doi":"10.1109/REDW.1996.574182","DOIUrl":"https://doi.org/10.1109/REDW.1996.574182","url":null,"abstract":"Analog CMOS circuitry is becoming common in the marketplace. Two commercial ADC are tested in the total dose and dose rate environments. Test results and applicability to system use are discussed.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116386437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Single event effect proton and heavy ions test results for Ethernet local area network commercial devices 以太网局域网商用设备单事件效应质子和重离子测试结果
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574192
C. Poivey, P. Garnier, T. Carrière, J. Nagel
{"title":"Single event effect proton and heavy ions test results for Ethernet local area network commercial devices","authors":"C. Poivey, P. Garnier, T. Carrière, J. Nagel","doi":"10.1109/REDW.1996.574192","DOIUrl":"https://doi.org/10.1109/REDW.1996.574192","url":null,"abstract":"We present proton and heavy ion single event effect (SEE) ground test results for candidate spacecraft commercial electronics. Device types are IEEE802.3 (ETHERNET) Local Area Network (LAN) controllers, repeaters and transceivers.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116743473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of ionizing radiation on the Honeywell HTMOS high temperature linear CMOS technology 电离辐射对霍尼韦尔HTMOS高温线性CMOS技术的影响
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574189
D. Larsen, P. Welling, W. Tsacoyeanes
{"title":"The effects of ionizing radiation on the Honeywell HTMOS high temperature linear CMOS technology","authors":"D. Larsen, P. Welling, W. Tsacoyeanes","doi":"10.1109/REDW.1996.574189","DOIUrl":"https://doi.org/10.1109/REDW.1996.574189","url":null,"abstract":"The high dose-rate transient response and radiation hardness to total ionizing dose of Honeywell's HTMOS 10 V linear technology were evaluated. Although this technology was designed for high-temperature applications, all irradiation and measurements herein were performed at room temperature. Results show that the HT1104 Quad Operational Amplifier and HT1204 Quad Analog Switch survive 5/spl times/10/sup 11/ rads(Si)/s, with recovery times /spl les/10 /spl mu/s. Although all devices were functional to 1 Mrad(SiO/sub 2/), significant increases in IC current parameters were observed. The HT1204 off-state leakage current fell from manufacturer specification by 100 krads(SiO/sub 2/). This work suggests that although linear ICs derived from a hardened CMOS/SOI technology sustain latch-up immunity and fast recovery from high dose rates, it is nontrivial to sustain total dose hardness, while modifying processes to accommodate high-temperature applications.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134166011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The total dose response of NPN transistors with different package types to various irradiation conditions 不同封装类型的NPN晶体管在不同辐照条件下的总剂量响应
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574187
S. Dowling
{"title":"The total dose response of NPN transistors with different package types to various irradiation conditions","authors":"S. Dowling","doi":"10.1109/REDW.1996.574187","DOIUrl":"https://doi.org/10.1109/REDW.1996.574187","url":null,"abstract":"Devices with two different geometries were made from single wafers, in four different packages. The effects of temperature, shielding and dose rate during irradiation were also studied, for total doses of 25 to 200 Gy.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125209011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
"RADON-5E" portable pulsed laser simulator: description, qualification technique and results, dosimetry procedure “RADON-5E”便携式脉冲激光模拟器:描述、鉴定技术和结果、剂量测定程序
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574188
A. Nikiforov, O.B. Mavritsky, A. N. Egorov, V.S. Figurov, V. A. Telets, P.K. Skorobogatov, S.A. Polevich
{"title":"\"RADON-5E\" portable pulsed laser simulator: description, qualification technique and results, dosimetry procedure","authors":"A. Nikiforov, O.B. Mavritsky, A. N. Egorov, V.S. Figurov, V. A. Telets, P.K. Skorobogatov, S.A. Polevich","doi":"10.1109/REDW.1996.574188","DOIUrl":"https://doi.org/10.1109/REDW.1996.574188","url":null,"abstract":"The original \"RADON-5E\" portable laser simulator for IC transient radiation effects investigation is developed and described. The parameters measurement procedure and qualification technique are worked out. The qualification tests results are presented. The dosimetry procedure is developed and \"calibration curves\" for several IC are measured in flash X-ray machine tests. Laser simulation errors were estimated in \"RADON-5E\" vs. flash X-ray machine comparative tests.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114399583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
The heavy ion irradiation facility at CYCLONE - a dedicated SEE beam line 气旋的重离子辐照设施——一条专用的SEE束流线
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574193
G. Berger, G. Ryckewaert, R. Harboe-Sørensen, L. Adams
{"title":"The heavy ion irradiation facility at CYCLONE - a dedicated SEE beam line","authors":"G. Berger, G. Ryckewaert, R. Harboe-Sørensen, L. Adams","doi":"10.1109/REDW.1996.574193","DOIUrl":"https://doi.org/10.1109/REDW.1996.574193","url":null,"abstract":"After a two years evaluation and assessment period of the CYClotron of LOuvain la NEuve (CYCLONE) usability for heavy ion SEE testing, the European Space Agency has now initiated the set-up of a permanent beam line dedicated for SEE testing. This paper describes the CYCLONE accelerator, the beam line used so far, presents some experimental results which are compared with data obtained at the Tandem accelerator at Brookhaven National Laboratory (BNL) and details present and future developments.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132505972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Solar cell degradation observed by the Advanced Photovoltaic and Electronics experiments (APEX) satellite 先进光伏与电子实验(APEX)卫星观测到的太阳能电池退化
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574196
K. Ray, D. Delorey, E. Mullen, D.A. Guidice, D. Marvin, H. Curtis, M. Piszczor
{"title":"Solar cell degradation observed by the Advanced Photovoltaic and Electronics experiments (APEX) satellite","authors":"K. Ray, D. Delorey, E. Mullen, D.A. Guidice, D. Marvin, H. Curtis, M. Piszczor","doi":"10.1109/REDW.1996.574196","DOIUrl":"https://doi.org/10.1109/REDW.1996.574196","url":null,"abstract":"This paper presents results from the Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment flown on board the Advanced Photovoltaic and Electronics experiment (APEX) satellite launched on 3 August 1994 into a 2552 km/spl times/363 km orbit with a 70/spl deg/ inclination. Results presented are based on 4576 orbits of data from 3 August 1994 to 11 August 1995. Fifteen solar arrays encompassing a wide range of solar cell materials and manufacturing techniques were flown. Comparisons between flight data and predicted performance based on the NASA AP8MIN proton model and methods described in the JPL Solar Cell Handbook are made.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"13 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114092883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dose rate effects of a bipolar A/D converter 双极a /D转换器的剂量率效应
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574186
G. Youk
{"title":"Dose rate effects of a bipolar A/D converter","authors":"G. Youk","doi":"10.1109/REDW.1996.574186","DOIUrl":"https://doi.org/10.1109/REDW.1996.574186","url":null,"abstract":"Total ionizing dose-rate tests of an AD574 analog-to-digital converter were performed at dose rates of 2 to 10 rad(Si)/sec at an operating temperature (41/spl deg/C). The AD574 has been manufactured by Analog Devices using Bipolar II technology. Results were compared with previous results from others to see trends. The results show increasing failure rate as dose rate increases. Unlike off-line test results at room temperature, no sign of degradation at low dose rates was found from the in-situ tests of AD574 devices at elevated temperature. Fast recovery of failure within 20 minutes post-irradiation annealing was observed. This recovery automatically rules out an interface-trap buildup as a dominant failure mechanism. The contribution of bulk-oxide charges seems to be a major factor.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124840620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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