发布求助
文献互助 智能选刊 最新文献

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference最新文献

筛选
英文 中文
Opportunities for single event and other radiation effects testing and research at the Indiana University Cyclotron Facility 在印第安纳大学回旋加速器设施进行单事件和其他辐射效应测试和研究的机会
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574194
C. Foster, S. Casey, A. L. Johnson, P. Miesle, N. Sifri, A. H. Skees, K. Murray
{"title":"Opportunities for single event and other radiation effects testing and research at the Indiana University Cyclotron Facility","authors":"C. Foster, S. Casey, A. L. Johnson, P. Miesle, N. Sifri, A. H. Skees, K. Murray","doi":"10.1109/REDW.1996.574194","DOIUrl":"https://doi.org/10.1109/REDW.1996.574194","url":null,"abstract":"The beam line end station, associated instrumentation and dosimetry used at the Indiana University Cyclotron Facility for radiation effects research and testing with up to 200 MeV protons are described.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130201032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Total dose radiation hard 0.5 /spl mu/m SOI CMOS transistors and 256 K SRAMs 总剂量辐射硬0.5 /spl μ m SOI CMOS晶体管和256k sram
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574190
S.T. Liu, W. Jenkins
{"title":"Total dose radiation hard 0.5 /spl mu/m SOI CMOS transistors and 256 K SRAMs","authors":"S.T. Liu, W. Jenkins","doi":"10.1109/REDW.1996.574190","DOIUrl":"https://doi.org/10.1109/REDW.1996.574190","url":null,"abstract":"The first 2 Mrad(SiO/sub 2/) total dose hard 0.5 /spl mu/m CMOS SOI 256 K SRAM fabricated in SIMOX has been demonstrated. The address access time varied from 15 ns at 3.6 V to 19 ns at 3.0 V. The address access time was nearly independent of temperature from -55/spl deg/C to 125/spl deg/C and independent of radiation to 2/spl times/10/sup 6/ rad(SiO/sub 2/) for a given Vdd. The standby current was 0.5 mA at 2/spl times/10/sup 6/ rad(SiO/sub 2/) which was much better than the specified 1.5 mA.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133182004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current single event effect test results for candidate spacecraft electronics 候选航天器电子器件当前单事件效应试验结果
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574184
K. Label, A. Moran, D. Hawkins, A. Sanders, C. Seidleck, H.S. Kim, J.E. Forney, E. Stassinopoulos, P. Marshall, C. Dale, J. Kinnison, B. Carkhuff
{"title":"Current single event effect test results for candidate spacecraft electronics","authors":"K. Label, A. Moran, D. Hawkins, A. Sanders, C. Seidleck, H.S. Kim, J.E. Forney, E. Stassinopoulos, P. Marshall, C. Dale, J. Kinnison, B. Carkhuff","doi":"10.1109/REDW.1996.574184","DOIUrl":"https://doi.org/10.1109/REDW.1996.574184","url":null,"abstract":"We present both proton and heavy ion single event effect (SEE) ground test results for candidate spacecraft electronics. A variety of digital and analog devices were tested, including EEPROMs, DRAMs, and DC-DC converters.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Heavy ions evaluation of GaAs microwave devices GaAs微波器件的重离子评价
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574195
C. Barillot, A. Bensoussan, F. Brasseau, P. Calvel
{"title":"Heavy ions evaluation of GaAs microwave devices","authors":"C. Barillot, A. Bensoussan, F. Brasseau, P. Calvel","doi":"10.1109/REDW.1996.574195","DOIUrl":"https://doi.org/10.1109/REDW.1996.574195","url":null,"abstract":"Four GaAs processes were evaluated under Heavy ion testing in order to estimate their sensitivity to Single Event Burnout. Different bias were applied. Burnout has been achieved for the higher voltages, but the hardness of these four processes has been confirmed for nominal space applications up to the maximum rating conditions.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115522847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Update of single event failure in power MOSFETs 功率mosfet的单事件故障更新
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574191
D. Nichols, J. Coss, T. Miyahira, J. Titus, D. Oberg, J. Wert, P. Majewski, J. Lintz
{"title":"Update of single event failure in power MOSFETs","authors":"D. Nichols, J. Coss, T. Miyahira, J. Titus, D. Oberg, J. Wert, P. Majewski, J. Lintz","doi":"10.1109/REDW.1996.574191","DOIUrl":"https://doi.org/10.1109/REDW.1996.574191","url":null,"abstract":"This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122133965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs NASA项目低剂量率测试的总电离剂量(TID)评估结果
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI: 10.1109/REDW.1996.574183
A.K. Sharma, K. Sahu, S. Brashears
{"title":"Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs","authors":"A.K. Sharma, K. Sahu, S. Brashears","doi":"10.1109/REDW.1996.574183","DOIUrl":"https://doi.org/10.1109/REDW.1996.574183","url":null,"abstract":"Low dose rate radiation testing in the range of 0.01-0.20 rads(Si)/s has been performed at Goddard Space Flight Center on a wide variety of non-RH (rad-hard) part types in the last few years. This paper reports on recent test results of EEPROMs, Operational Amplifiers, Analog-to-Digital Converters (ADCs) and Digital-to-Analog Converters (DACs), and DC-DC converters. These results have shown that non-RH parts are suitable for many low earth orbiting satellites, where predicted mission total dose requirements may be in the range of 0.5-10 krads(Si). However, a careful characterization of non-RH parts should be performed to verify that the parts meet the requirements of their intended application in the projected mission radiation environment.","PeriodicalId":196196,"journal":{"name":"1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127724418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信