总剂量辐射硬0.5 /spl μ m SOI CMOS晶体管和256k sram

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI:10.1109/REDW.1996.574190

S.T. Liu, W. Jenkins

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引用次数: 1

摘要

第一个2mrad (SiO/ sub2 /)总剂量硬0.5 /spl mu/m CMOS SOI 256k SRAM在SIMOX制造。地址访问时间从3.6 V时的15ns到3.0 V时的19ns不等。对于给定的Vdd，地址访问时间几乎与温度(-55 ~ 125)无关，与辐射(2/spl times/10/sup 6/ rad)无关。待机电流在2/spl次/10/sup 6/ rad(SiO/sub 2/)时为0.5 mA，比规定的1.5 mA要好得多。

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Total dose radiation hard 0.5 /spl mu/m SOI CMOS transistors and 256 K SRAMs

The first 2 Mrad(SiO/sub 2/) total dose hard 0.5 /spl mu/m CMOS SOI 256 K SRAM fabricated in SIMOX has been demonstrated. The address access time varied from 15 ns at 3.6 V to 19 ns at 3.0 V. The address access time was nearly independent of temperature from -55/spl deg/C to 125/spl deg/C and independent of radiation to 2/spl times/10/sup 6/ rad(SiO/sub 2/) for a given Vdd. The standby current was 0.5 mA at 2/spl times/10/sup 6/ rad(SiO/sub 2/) which was much better than the specified 1.5 mA.

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1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference

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