Heavy ions evaluation of GaAs microwave devices

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI:10.1109/REDW.1996.574195

C. Barillot, A. Bensoussan, F. Brasseau, P. Calvel

引用次数: 4

Abstract

Four GaAs processes were evaluated under Heavy ion testing in order to estimate their sensitivity to Single Event Burnout. Different bias were applied. Burnout has been achieved for the higher voltages, but the hardness of these four processes has been confirmed for nominal space applications up to the maximum rating conditions.

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GaAs微波器件的重离子评价

在重离子测试下评估了四种砷化镓工艺，以估计它们对单事件烧坏的敏感性。应用了不同的偏差。在较高的电压下已经达到了烧坏，但这四种工艺的硬度已被证实适用于最大额定条件下的标称空间应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference

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