功率mosfet的单事件故障更新

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI:10.1109/REDW.1996.574191

D. Nichols, J. Coss, T. Miyahira, J. Titus, D. Oberg, J. Wert, P. Majewski, J. Lintz

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引用次数: 22

摘要

本文介绍了1994年第一本功率mosfet单事件测试数据汇编的更新。它为6家制造商的61种设备提供了烧坏或闸口破裂的失效阈值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Update of single event failure in power MOSFETs

This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers.

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来源期刊

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference

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