The effects of ionizing radiation on the Honeywell HTMOS high temperature linear CMOS technology

Abstract

The high dose-rate transient response and radiation hardness to total ionizing dose of Honeywell's HTMOS 10 V linear technology were evaluated. Although this technology was designed for high-temperature applications, all irradiation and measurements herein were performed at room temperature. Results show that the HT1104 Quad Operational Amplifier and HT1204 Quad Analog Switch survive 5/spl times/10/sup 11/ rads(Si)/s, with recovery times /spl les/10 /spl mu/s. Although all devices were functional to 1 Mrad(SiO/sub 2/), significant increases in IC current parameters were observed. The HT1204 off-state leakage current fell from manufacturer specification by 100 krads(SiO/sub 2/). This work suggests that although linear ICs derived from a hardened CMOS/SOI technology sustain latch-up immunity and fast recovery from high dose rates, it is nontrivial to sustain total dose hardness, while modifying processes to accommodate high-temperature applications.