The total dose response of NPN transistors with different package types to various irradiation conditions

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1996-07-19 DOI:10.1109/REDW.1996.574187

S. Dowling

引用次数: 3

Abstract

Devices with two different geometries were made from single wafers, in four different packages. The effects of temperature, shielding and dose rate during irradiation were also studied, for total doses of 25 to 200 Gy.

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不同封装类型的NPN晶体管在不同辐照条件下的总剂量响应

两种不同几何形状的器件由单晶片制成，用四种不同的封装。在总剂量为25至200 Gy的情况下，还研究了辐照期间温度、屏蔽和剂量率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference

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