2016 IEEE International Electron Devices Meeting (IEDM)最新文献_第6页

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin FOI FinFET具有超低寄生电阻，在隔离体翅片上形成全金属源极和漏极

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838438

Qingzhu Zhang, H. Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, W. Xiong, J. Xiang, Zhangyu Zhou, S. Mao, Gaobo Xu, Jinbiao Liu, Y. Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye

{"title":"FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin","authors":"Qingzhu Zhang, H. Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, W. Xiong, J. Xiang, Zhangyu Zhou, S. Mao, Gaobo Xu, Jinbiao Liu, Y. Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye","doi":"10.1109/IEDM.2016.7838438","DOIUrl":"https://doi.org/10.1109/IEDM.2016.7838438","url":null,"abstract":"The large parasitic resistance has become a critical limiting factor to on current (ION) of FinFET and nanowire devices. Fully metallic source and drain (MSD) process is one of the most promising solutions but it often suffers from intolerant junction leakage in bulk FETs. In this paper, fully MSD process on fin-on-insulator (FOI) FinFET is investigated extensively for the first time. By forming fully Ni(Pt) silicide on physically isolated fins, about 90% reduction in contacted resistivities (Rcs) and 55% reduction in sheet resistances (Rss) are achieved without obvious junction leakage degradation. As a consequence, Ion of transistor, with gate length (Lg) of 20nm, is increased 30 times, up to 547μA/μm for NMOS and 324 μA/μm for PMOS, respectively. Excellent controls of SCE and channel leakage with 47% DIBL, 32% SS and 2.5% device leakages reductions over the counterpart of conventional bulk FinFETs are also obtained. Meanwhile, the fully MSD process induces clear tensile stress into narrow fin-channel, resulting in enhanced electron mobility in NMOS. A further improvement in PMOS drive ability (486μA/μm) by using Schottky barrier source and drain (SBSD) technology is also explored.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Resonant-tunneling-diode terahertz oscillators and applications 共振隧道二极管太赫兹振荡器及其应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838504

M. Asada, S. Suzuki

引用次数: 2

Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts 具有低温加工末端键合金属触点的碳纳米管互补逻辑

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838350

Jianshi Tang, Q. Cao, D. Farmer, G. Tulevski, Shu-Jen Han

引用次数: 11

Comprehensive model for progressive breakdown in nFETs and pFETs nfet和pfet渐进击穿的综合模型

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838522

S. Lombardo, E. Wu, J. Stathis

引用次数: 3

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications 22nm FDSOI技术，适用于新兴的移动、物联网和射频应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/iedm.2016.7838029

R. Carter, J. Mazurier, L. Pirro, J.-U. Sachse, P. Baars, J. Faul, C. Grass, G. Grasshoff, P. Javorka, T. Kammler, A. Preusse, S. Nielsen, T. Heller, J. Schmidt, H. Niebojewski, P. Chou, E. Smith, E. Erben, C. Metze, C. Bao, Y. Andee, I. Aydin, S. Morvan, J. Bernard, E. Bourjot, T. Feudel, D. Harame, R. Nelluri, H.-J. Thees, L. M-Meskamp, J. Kluth, R. Mulfinger, M. Rashed, R. Taylor, C. Weintraub, J. Hoentschel, M. Vinet, J. Schaeffer, B. Rice

{"title":"22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications","authors":"R. Carter, J. Mazurier, L. Pirro, J.-U. Sachse, P. Baars, J. Faul, C. Grass, G. Grasshoff, P. Javorka, T. Kammler, A. Preusse, S. Nielsen, T. Heller, J. Schmidt, H. Niebojewski, P. Chou, E. Smith, E. Erben, C. Metze, C. Bao, Y. Andee, I. Aydin, S. Morvan, J. Bernard, E. Bourjot, T. Feudel, D. Harame, R. Nelluri, H.-J. Thees, L. M-Meskamp, J. Kluth, R. Mulfinger, M. Rashed, R. Taylor, C. Weintraub, J. Hoentschel, M. Vinet, J. Schaeffer, B. Rice","doi":"10.1109/iedm.2016.7838029","DOIUrl":"https://doi.org/10.1109/iedm.2016.7838029","url":null,"abstract":"22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μΑ/μm (856μΑ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V<inf>min</inf> for 8T logic libraries, as well as 0.62V and 0.52V V<inf>min</inf> for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I<inf>off</inf>, and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f<inf>T</inf>/f<inf>MAx</inf> of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f<inf>MAx</inf> extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122340143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 173

High performance, flexible CMOS circuits and sensors toward wearable healthcare applications 面向可穿戴医疗保健应用的高性能、柔性CMOS电路和传感器

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838358

K. Takei

引用次数: 13

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond CMOS兼容MIM去耦电容器，具有可靠的亚纳米EOT高k堆栈，适用于7纳米及以上节点

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838382

T. Ando, E. Cartier, P. Jamison, A. Pyzyna, S. Kim, J. Bruley, K. Chung, H. Shobha, I. Estrada-Raygoza, H. Tang, S. Kanakasabapathy, T. Spooner, L. Clevenger, G. Bonilla, H. Jagannathan, V. Narayanan

引用次数: 9

Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance 系统验证2nm直径垂直MTJ阵列和MgO势垒在10 nm以下的嵌入式STT-MRAM具有几乎无限的耐用性

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838493

J. Kan, C. Park, C. Ching, J. Ahn, L. Xue, R. Wang, A. Kontos, S. Liang, M. Bangar, H. Chen, S. Hassan, S. Kim, M. Pakala, S. H. Kang

引用次数: 53

Four-directional pixel-wise polarization CMOS image sensor using air-gap wire grid on 2.5-μm back-illuminated pixels 在2.5 μm背照像素上采用气隙线栅的四向像素偏振CMOS图像传感器

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838378

Tomohiro Yamazaki, Yasushi Maruyama, Yusuke Uesaka, Motoaki Nakamura, Y. Matoba, T. Terada, K. Komori, Y. Ohba, S. Arakawa, Yasutaka Hirasawa, Yuhi Kondo, J. Murayama, Kentaro Akiyama, Y. Oike, Shuzo Sato, T. Ezaki

引用次数: 20

Two-dimensional heterojunction interlayer tunnel FET (Thin-TFET): From theory to applications 二维异质结层间隧道FET (Thin-TFET):从理论到应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838451

Mingda Li, R. Yan, D. Jena, H. Xing

引用次数: 15