22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/iedm.2016.7838029

R. Carter, J. Mazurier, L. Pirro, J.-U. Sachse, P. Baars, J. Faul, C. Grass, G. Grasshoff, P. Javorka, T. Kammler, A. Preusse, S. Nielsen, T. Heller, J. Schmidt, H. Niebojewski, P. Chou, E. Smith, E. Erben, C. Metze, C. Bao, Y. Andee, I. Aydin, S. Morvan, J. Bernard, E. Bourjot, T. Feudel, D. Harame, R. Nelluri, H.-J. Thees, L. M-Meskamp, J. Kluth, R. Mulfinger, M. Rashed, R. Taylor, C. Weintraub, J. Hoentschel, M. Vinet, J. Schaeffer, B. Rice

{"title":"22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications","authors":"R. Carter, J. Mazurier, L. Pirro, J.-U. Sachse, P. Baars, J. Faul, C. Grass, G. Grasshoff, P. Javorka, T. Kammler, A. Preusse, S. Nielsen, T. Heller, J. Schmidt, H. Niebojewski, P. Chou, E. Smith, E. Erben, C. Metze, C. Bao, Y. Andee, I. Aydin, S. Morvan, J. Bernard, E. Bourjot, T. Feudel, D. Harame, R. Nelluri, H.-J. Thees, L. M-Meskamp, J. Kluth, R. Mulfinger, M. Rashed, R. Taylor, C. Weintraub, J. Hoentschel, M. Vinet, J. Schaeffer, B. Rice","doi":"10.1109/iedm.2016.7838029","DOIUrl":null,"url":null,"abstract":"22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μΑ/μm (856μΑ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V<inf>min</inf> for 8T logic libraries, as well as 0.62V and 0.52V V<inf>min</inf> for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I<inf>off</inf>, and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f<inf>T</inf>/f<inf>MAx</inf> of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f<inf>MAx</inf> extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"173","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iedm.2016.7838029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 173

Abstract

22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μΑ/μm (856μΑ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V Vmin for 8T logic libraries, as well as 0.62V and 0.52V Vmin for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm Ioff, and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high fT/fMAx of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high fMAx extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.

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22nm FDSOI技术，适用于新兴的移动、物联网和射频应用

22FDX™是业界首款FDSOI技术，旨在满足新兴移动、物联网(IoT)和射频应用的需求。该平台在具有成本效益的平面器件架构中实现了16/14nm FinFET技术的功率和性能效率，可以减少约30%的掩模。性能来自第二代FDSOI晶体管，在0.8 V和100nA/μm下产生的fet驱动电流为910μΑ/μm (856μΑ/μm)。对于超低功耗应用，它为8T逻辑库提供低至0.4V Vmin的低电压工作，为高密度和大电流位单元提供0.62V和0.52V Vmin，接近1pA/μm Ioff的超低泄漏器件，以及主动权衡功率和性能的体偏置。实现了FinFET优越的RF/模拟特性，包括nFET和fet分别达到375GHz/290GHz和260GHz/250GHz的高fT/fMAx。高fMAx将功能扩展到5G和毫米波(>24GHz)射频应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE International Electron Devices Meeting (IEDM)

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