A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838334

R. Xie, P. Montanini, K. Akarvardar, N. Tripathi, B. Haran, S. Johnson, T. Hook, B. Hamieh, D. Corliss, J. Wang, Xin He Miao, J. Sporre, J. Fronheiser, N. Loubet, M. Sung, S. Sieg, S. Mochizuki, C. Prindle, S. Seo, A. Greene, J. Shearer, A. Labonté, S. Fan, L. Liebmann, R. Chao, A. Arceo, K. Chung, K. Cheon, P. Adusumilli, H. Amanapu, Z. Bi, J. Cha, H. Chen, R. Conti, R. Galatage, O. Gluschenkov, V. Kamineni, K. Kim, C. Lee, F. Lie, Z. Liu, S. Mehta, E. Miller, H. Niimi, C. Niu, C. Park, D. Park, M. Raymond, B. Sahu, M. Sankarapandian, S. Siddiqui, R. Southwick, L. Sun, C. Surisetty, S. Tsai, S. Whang, P. Xu, Y. Xu, C. Yeh, P. Zeitzoff, J. Zhang, J. Li, J. Demarest, J. Arnold, D. Canaperi, D. Dunn, N. Felix, D. Gupta, H. Jagannathan, S. Kanakasabapathy, W. Kleemeier, C. Labelle, M. Mottura, P. Oldiges, S. Skordas, T. Standaert, T. Yamashita, M. Colburn, M. Na, V. Paruchuri, S. Lian, R. Divakaruni, T. Gow, S. Lee, A. Knorr, H. Bu, M. Khare

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引用次数: 92

Abstract

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.

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一种7nm FinFET技术，具有EUV图形和双应变高迁移率通道

我们提出了一种7nm技术，该技术具有FinFET技术中最紧密的接触聚间距(CPP)为44/48nm，金属化间距为36nm。为了克服光学光刻技术的局限性，首次在多个临界水平上引入了极紫外光刻技术。双应变通道也已实现，以提高高性能应用的移动性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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