5nm技术的32位处理器核心:晶体管和互连对VLSI系统性能的影响分析

Chi-Shuen Lee, B. Cline, Saurabh Sinha, G. Yeric, H. Wong
{"title":"5nm技术的32位处理器核心:晶体管和互连对VLSI系统性能的影响分析","authors":"Chi-Shuen Lee, B. Cline, Saurabh Sinha, G. Yeric, H. Wong","doi":"10.1109/IEDM.2016.7838498","DOIUrl":null,"url":null,"abstract":"A 32-bit commercial processor core is implemented at 5-nm design rules to study transistor and interconnect technology options and the impact of increasing interconnect resistance on system performance. Insights obtained are: 1) The major benefit of downscaling FET gate length is reducing MEOL parasitics instead of the intrinsic gate capacitance. 2) 2D-material-based FETs can achieve ∼2∗ better core-level energy-delay-product in theory compared to the projected Si FinFET; contact resistivity <6∗10−8 Ω-μm2 is required for 2D-FETs to match the core performance using Si FinFET. 3) Signal routing optimization can mitigate the impact of BEOL resistance such it contributes to 15%–35% of the total delay at the cost of using more cells and vias, which is not manifest if a ring oscillator with fixed wire load is used without performing full place-and-route. 4) Thinning Cu diffusion barrier can improve system performance up to 11% and alleviate BEOL variation impact.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"32-bit Processor core at 5-nm technology: Analysis of transistor and interconnect impact on VLSI system performance\",\"authors\":\"Chi-Shuen Lee, B. Cline, Saurabh Sinha, G. Yeric, H. Wong\",\"doi\":\"10.1109/IEDM.2016.7838498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 32-bit commercial processor core is implemented at 5-nm design rules to study transistor and interconnect technology options and the impact of increasing interconnect resistance on system performance. Insights obtained are: 1) The major benefit of downscaling FET gate length is reducing MEOL parasitics instead of the intrinsic gate capacitance. 2) 2D-material-based FETs can achieve ∼2∗ better core-level energy-delay-product in theory compared to the projected Si FinFET; contact resistivity <6∗10−8 Ω-μm2 is required for 2D-FETs to match the core performance using Si FinFET. 3) Signal routing optimization can mitigate the impact of BEOL resistance such it contributes to 15%–35% of the total delay at the cost of using more cells and vias, which is not manifest if a ring oscillator with fixed wire load is used without performing full place-and-route. 4) Thinning Cu diffusion barrier can improve system performance up to 11% and alleviate BEOL variation impact.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

摘要

在5nm设计规则下实现32位商用处理器核心,以研究晶体管和互连技术选项以及增加互连电阻对系统性能的影响。获得的见解是:1)减小FET栅极长度的主要好处是减少MEOL寄生而不是固有栅极电容。2)基于2d材料的fet在理论上可以实现比投影Si FinFET更好的核心级能量延迟积(~ 2 *);接触电阻率<6∗10−8 Ω-μm2是2d - fet匹配使用Si FinFET的核心性能所必需的。3)信号路由优化可以减轻BEOL电阻的影响,因此它以使用更多的单元和过孔为代价贡献15%-35%的总延迟,如果使用固定导线负载的环形振荡器而不执行完整的放置和路由,则不会出现这种情况。4) Cu扩散障壁减薄可使系统性能提高11%,减轻BEOL变化的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
32-bit Processor core at 5-nm technology: Analysis of transistor and interconnect impact on VLSI system performance
A 32-bit commercial processor core is implemented at 5-nm design rules to study transistor and interconnect technology options and the impact of increasing interconnect resistance on system performance. Insights obtained are: 1) The major benefit of downscaling FET gate length is reducing MEOL parasitics instead of the intrinsic gate capacitance. 2) 2D-material-based FETs can achieve ∼2∗ better core-level energy-delay-product in theory compared to the projected Si FinFET; contact resistivity <6∗10−8 Ω-μm2 is required for 2D-FETs to match the core performance using Si FinFET. 3) Signal routing optimization can mitigate the impact of BEOL resistance such it contributes to 15%–35% of the total delay at the cost of using more cells and vias, which is not manifest if a ring oscillator with fixed wire load is used without performing full place-and-route. 4) Thinning Cu diffusion barrier can improve system performance up to 11% and alleviate BEOL variation impact.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信