2016 IEEE International Electron Devices Meeting (IEDM)最新文献_第5页

Electric-field induced F− migration in self-aligned InGaAs MOSFETs and mitigation 自对准InGaAs mosfet中电场诱导的F−迁移及其抑制

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838338

Xiaowei Cai, Jianqiang Lin, D. Antoniadis, J. D. del Alamo

引用次数: 5

Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes III-V超薄体、FinFET和纳米线mosfet在两个下一代技术节点上的性能预测

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838515

M. Rau, E. Caruso, D. Lizzit, P. Palestri, D. Esseni, A. Schenk, L. Selmi, M. Luisier

{"title":"Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes","authors":"M. Rau, E. Caruso, D. Lizzit, P. Palestri, D. Esseni, A. Schenk, L. Selmi, M. Luisier","doi":"10.1109/IEDM.2016.7838515","DOIUrl":"https://doi.org/10.1109/IEDM.2016.7838515","url":null,"abstract":"Using state-of-the-art simulation tools ranging from semi-classical Monte-Carlo to full-quantum atomistic approaches, the competitiveness of III-V compounds for next-generation high-performance logic switches is confirmed. A planar double-gate ultra-thin-body (DG-UTB), a triple-gate FinFET, and a gate-all-around nanowire (NW) transistor have been designed according to the ITRS specifications for two technology nodes with physical gate lengths of Lg=15 nm and 10.4 nm. A thorough performance comparison of digital and analog figures of merit at these nodes reveals that for Lg=15 nm, the performance of planar and 3-D architectures is comparable. At LG=10.4 nm, the III-V NW promises the highest performance, especially when lowering the supply voltage from 0.59 V to 0.50 V. It also significantly outperforms its strained silicon counterpart. Finally, the effects of series resistance combined with interface traps, surface roughness, alloy scattering, and electron-phonon interactions have been found to deteriorate the III-V ballistic ON-current by 50–60%.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121792164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts 具有低温加工末端键合金属触点的碳纳米管互补逻辑

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838350

Jianshi Tang, Q. Cao, D. Farmer, G. Tulevski, Shu-Jen Han

引用次数: 11

Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding 采用先进Cu2Cu混合键合技术的新型堆叠CMOS图像传感器

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838375

Y. Kagawa, N. Fujii, K. Aoyagi, Y. Kobayashi, S. Nishi, N. Todaka, S. Takeshita, J. Taura, H. Takahashi, Y. Nishimura, K. Tatani, M. Kawamura, H. Nakayama, T. Nagano, K. Ohno, H. Iwamoto, S. Kadomura, T. Hirayama

引用次数: 84

Wide bandgap (WBG) power devices and their impacts on power delivery systems 宽带隙功率器件及其对电力输送系统的影响

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838457

A. Huang

引用次数: 35

High-mobility TFT and enhanced luminescence utilizing nucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic integration 利用核控GeSn生长在透明衬底上的高迁移率TFT和增强发光，用于单片光电集成

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838470

H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe

引用次数: 3

Comprehensive model for progressive breakdown in nFETs and pFETs nfet和pfet渐进击穿的综合模型

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838522

S. Lombardo, E. Wu, J. Stathis

引用次数: 3

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin FOI FinFET具有超低寄生电阻，在隔离体翅片上形成全金属源极和漏极

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838438

Qingzhu Zhang, H. Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, W. Xiong, J. Xiang, Zhangyu Zhou, S. Mao, Gaobo Xu, Jinbiao Liu, Y. Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye

{"title":"FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin","authors":"Qingzhu Zhang, H. Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, W. Xiong, J. Xiang, Zhangyu Zhou, S. Mao, Gaobo Xu, Jinbiao Liu, Y. Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye","doi":"10.1109/IEDM.2016.7838438","DOIUrl":"https://doi.org/10.1109/IEDM.2016.7838438","url":null,"abstract":"The large parasitic resistance has become a critical limiting factor to on current (ION) of FinFET and nanowire devices. Fully metallic source and drain (MSD) process is one of the most promising solutions but it often suffers from intolerant junction leakage in bulk FETs. In this paper, fully MSD process on fin-on-insulator (FOI) FinFET is investigated extensively for the first time. By forming fully Ni(Pt) silicide on physically isolated fins, about 90% reduction in contacted resistivities (Rcs) and 55% reduction in sheet resistances (Rss) are achieved without obvious junction leakage degradation. As a consequence, Ion of transistor, with gate length (Lg) of 20nm, is increased 30 times, up to 547μA/μm for NMOS and 324 μA/μm for PMOS, respectively. Excellent controls of SCE and channel leakage with 47% DIBL, 32% SS and 2.5% device leakages reductions over the counterpart of conventional bulk FinFETs are also obtained. Meanwhile, the fully MSD process induces clear tensile stress into narrow fin-channel, resulting in enhanced electron mobility in NMOS. A further improvement in PMOS drive ability (486μA/μm) by using Schottky barrier source and drain (SBSD) technology is also explored.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 垂直自旋传递转矩(p-STT)磁记忆的循环耐久性研究

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838468

R. Carboni, S. Ambrogio, Wei Chen, M. Siddik, J. Harms, Andy Lyle, Witold Kula, Gurtej S. Sandhu, Daniele Ielmini

引用次数: 26

Resonant-tunneling-diode terahertz oscillators and applications 共振隧道二极管太赫兹振荡器及其应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838504

M. Asada, S. Suzuki

引用次数: 2