采用先进Cu2Cu混合键合技术的新型堆叠CMOS图像传感器

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838375

Y. Kagawa, N. Fujii, K. Aoyagi, Y. Kobayashi, S. Nishi, N. Todaka, S. Takeshita, J. Taura, H. Takahashi, Y. Nishimura, K. Tatani, M. Kawamura, H. Nakayama, T. Nagano, K. Ohno, H. Iwamoto, S. Kadomura, T. Hirayama

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引用次数: 84

摘要

我们成功量产了新型堆叠背照CMOS图像传感器(BI-CIS)。在新的CIS中，我们引入了我们开发的先进的Cu2Cu杂化键。电学测试结果表明，我们的高鲁棒性Cu2Cu混合键合取得了显著的连通性和可靠性。对图像传感器的性能也进行了研究，我们的新型堆叠BI-CIS显示了良好的效果。

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Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding

We have successfully mass-produced novel stacked back-illuminated CMOS image sensors (BI-CIS). In the new CIS, we introduced advanced Cu2Cu hybrid bonding that we had developed. The electrical test results showed that our highly robust Cu2Cu hybrid bonding achieved remarkable connectivity and reliability. The performance of image sensor was also investigated and our novel stacked BI-CIS showed favorable results.

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2016 IEEE International Electron Devices Meeting (IEDM)

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