nfet和pfet渐进击穿的综合模型

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838522

S. Lombardo, E. Wu, J. Stathis

{"title":"nfet和pfet渐进击穿的综合模型","authors":"S. Lombardo, E. Wu, J. Stathis","doi":"10.1109/IEDM.2016.7838522","DOIUrl":null,"url":null,"abstract":"Through comparison with a large data set, we show that progressive breakdown (PBD) of gate oxides is described by a physical model coupling carrier energy dissipation to electromigration producing the PBD growth. Dependence on temperature, voltage, carrier type, oxide thickness, and the statistics are well described in a consistent framework.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Comprehensive model for progressive breakdown in nFETs and pFETs\",\"authors\":\"S. Lombardo, E. Wu, J. Stathis\",\"doi\":\"10.1109/IEDM.2016.7838522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through comparison with a large data set, we show that progressive breakdown (PBD) of gate oxides is described by a physical model coupling carrier energy dissipation to electromigration producing the PBD growth. Dependence on temperature, voltage, carrier type, oxide thickness, and the statistics are well described in a consistent framework.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838522\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

通过与大型数据集的比较，我们发现栅极氧化物的递进击穿(PBD)是由耦合载流子能量耗散和导致PBD生长的电迁移的物理模型描述的。对温度、电压、载流子类型、氧化物厚度和统计数据的依赖性在一致的框架中得到了很好的描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comprehensive model for progressive breakdown in nFETs and pFETs

Through comparison with a large data set, we show that progressive breakdown (PBD) of gate oxides is described by a physical model coupling carrier energy dissipation to electromigration producing the PBD growth. Dependence on temperature, voltage, carrier type, oxide thickness, and the statistics are well described in a consistent framework.

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来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

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