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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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An experimental study on current vs. temperature effect of gold ribbon for wire bonding in power devices 功率器件焊线用金带电流与温度效应的实验研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151206
Shreesha Prabhu, Sankaran Koyili, M. Manjunath, M. Nayak
{"title":"An experimental study on current vs. temperature effect of gold ribbon for wire bonding in power devices","authors":"Shreesha Prabhu, Sankaran Koyili, M. Manjunath, M. Nayak","doi":"10.1109/ICEMELEC.2014.7151206","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151206","url":null,"abstract":"Wire Bonding is a well known method used for interconnecting integrated circuit (IC) die and the leads of its package. In this paper, the effect of current on the temperature of the gold (Au) ribbon used for wire bonding in the packaging of power device is presented. Infrared spectrometer study and direct thin film Pt temperature sensor analysis were used to analyze the temperature variations in gold ribbon.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122559215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study 不同钝化方式AlGaN/GaN hemt的反漏电流分析:一个案例研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151172
Anushree Tomer, S. Dayal, Sunil Sharma, H. Arora, Sonalee Kapoor, D. S. Rawal, S. Vinayak
{"title":"Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study","authors":"Anushree Tomer, S. Dayal, Sunil Sharma, H. Arora, Sonalee Kapoor, D. S. Rawal, S. Vinayak","doi":"10.1109/ICEMELEC.2014.7151172","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151172","url":null,"abstract":"The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism behind this behavior, the role of Poole-Frenkel emission on gate reverse leakage current for both the types of passivation schemes was investigated.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132487329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene 悬浮单层石墨烯的片浓度和温度相关电阻率建模
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151193
D. Saha, S. Bhattacharya, S. Mahapatra
{"title":"Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene","authors":"D. Saha, S. Bhattacharya, S. Mahapatra","doi":"10.1109/ICEMELEC.2014.7151193","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151193","url":null,"abstract":"In this paper, we address a simplified physics-based analytical model for the temperature - as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity of the suspended layer of graphene (SLG), we have utilized the Landauer formalism in the diffusive limit. Besides, the overall contribution of different scattering mechanisms has been calculated considering both the in-plane and the flexural phonons. The analytical model presented in this work is in good agreement with the available experimental data.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128709544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance comparison of bulk and SOI planar junctionless SONOS memory 块体和SOI平面无结SONOS存储器的性能比较
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151210
Rajesh Singh Lodhi, Somit Pandey, Chitrakant Sahu, Jawar Singh
{"title":"Performance comparison of bulk and SOI planar junctionless SONOS memory","authors":"Rajesh Singh Lodhi, Somit Pandey, Chitrakant Sahu, Jawar Singh","doi":"10.1109/ICEMELEC.2014.7151210","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151210","url":null,"abstract":"In this paper, we have demonstrated the performance analysis of a planar junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) memory cell implemented on the bulk and silicon-on-insulator (SOI) substrate wafer. Both cells are simulated using extensive two dimensional device simulator and compared on the basis of improved memory characteristics. The JL SOI SONOS exhibits larger memory window within a specified programming time as compared with the JL bulk type. The erasing efficiency of the JL bulk SONOS is better due to incorporation of carriers from the substrate end and it also has the advantage of tunable channel layer that can be controlled by substrate doping.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126286176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of gate leakage current in ultra-thin oxide grown by high water vapor pressure thermal oxidation on 4H-SiC 4H-SiC高水蒸汽压热氧化超薄氧化物栅漏电流分析
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151195
Madhup Shukla, N. Dasgupta
{"title":"Analysis of gate leakage current in ultra-thin oxide grown by high water vapor pressure thermal oxidation on 4H-SiC","authors":"Madhup Shukla, N. Dasgupta","doi":"10.1109/ICEMELEC.2014.7151195","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151195","url":null,"abstract":"Ultra-thin SiO2 layers were grown on n-type 4H-SiC by thermal oxidation in high pressure water vapor ambient. The gate leakage current mechanism at low electric fields and different temperatures was studied. The presence of direct tunneling (DT) and Schottky emission (SE) current mechanisms was observed, with DT dominating at low temperature region of up to 393 K and a combination of DT and SE present at higher temperatures of more than 393 K. The effective barrier height between SiC Fermi level and SiO2 conduction band edge was extracted by fitting the DT model to the experimental gate oxide leakage current density vs. gate oxide electric field curve. It is shown that effective barrier height decreased with increase in temperature and increase in SiC/SiO2 interface state density (Dit), giving rise to a higher DT current.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116804445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental study of boric acid diffused emitters for n-type c-Si solar cells n型c-Si太阳能电池用硼酸扩散发射体的实验研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151127
B. Singha, C. Solanki
{"title":"Experimental study of boric acid diffused emitters for n-type c-Si solar cells","authors":"B. Singha, C. Solanki","doi":"10.1109/ICEMELEC.2014.7151127","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151127","url":null,"abstract":"In this work, boric acid powder solution has been used as a dopant source for optimizing emitter sheet resistance values corresponding to temperature range 850°-900°C. High purity (99.999%), non-toxic and low-cost boron diffusion is found to be suitable for p or p+ emitters with minimum diffusion-induced defects. Formation of a boron-rich layer, which is considered as a major problem in B-diffusion is eliminated with introduction of controlled process steps. An increase of effective minority carrier lifetime is observed after the diffusion process. The measured Sun's Voc and Implied Voc for sheet resistances less than 100Ω/sq is in the range of 570-600 mV, without any optics-improving techniques, for Czochralski n-type c-Si wafers. This indicates the suitability of the use of boric acid as the dopant source for emitter formation in n-type c-Si solar cells.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130654712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of size on the scattering properties of silica nanoparticles 粒径对二氧化硅纳米颗粒散射特性的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151131
Sonali Das, A. Kundu, S. M. Hossain, H. Saha, S. Datta
{"title":"Effect of size on the scattering properties of silica nanoparticles","authors":"Sonali Das, A. Kundu, S. M. Hossain, H. Saha, S. Datta","doi":"10.1109/ICEMELEC.2014.7151131","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151131","url":null,"abstract":"The effect of size on the scattering properties of silica nanoparticles on glass has been presented here. Silica nanoparticles of two different sizes (~50 nm and ~300 nm diameter) have been synthesized by a modified Stober technique and applied by spin coating on glass surface. Scattering properties of the nanoparticles have been studied experimentally. It is seen that larger nanoparticles have a higher scattering efficiency, which validates the simulation results obtained using Lumerical FDTD Solutions. As silica nanoparticles are essentially lossless in the AM1.5G solar spectrum, they will be (for solar cell applications) an alternative, as scatterers, to lossy metal nanoparticles. Their scattering efficiency further enhances upon them embedding in a medium. Two possible configurations of integrating silica nanoparticles with amorphous silicon solar cells are also presented.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129453947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance 圆柱环绕双栅(CSDG) mosfet的材料工程，以提高静电完整性和射频性能
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151128
Jay Hind K. Verma, Mridula Gupta, S. Haldar, R. Gupta
{"title":"Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance","authors":"Jay Hind K. Verma, Mridula Gupta, S. Haldar, R. Gupta","doi":"10.1109/ICEMELEC.2014.7151128","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151128","url":null,"abstract":"This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon on ferroelectric Tunnel FET (SOF-TFET) for low power application 低功耗应用的铁电隧道场效应晶体管(softfet)
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151189
Sangeeta Singh, Pawan Pal, R. Mittal, Anurag Tamia, P. Kondekar
{"title":"Silicon on ferroelectric Tunnel FET (SOF-TFET) for low power application","authors":"Sangeeta Singh, Pawan Pal, R. Mittal, Anurag Tamia, P. Kondekar","doi":"10.1109/ICEMELEC.2014.7151189","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151189","url":null,"abstract":"In this paper, we propose and investigate a novel device structure for silicon-on-ferroelectric Tunnel FET (SOFTFET) based on the negative capacitance effect of the ferroelectric layer. The conduction mechanism of proposed device is based on the combined effect of two mechanisms namely, tunnelling and negative capacitance effect. Thus, it achieves a steep subthreshold slope (SS) of 13.9 mV/dec at room temperature. The various device performance parameters are investigated for the proposed structure using 2D TCAD simulations incorporating the drift-diffusion and 1-D Landau's models. Extensive device simulation proves that the silicon on ferroelectric Tunnel FET is a great improvement in terms of lower SS value and reduced hysteretic losses compared to the conventional TFET.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131999201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Variability on the chiro-optical response of helically arranged metallic nanoparticles 螺旋排列金属纳米颗粒的旋光响应变异性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151198
Haobijam Johnson Singh, Ambarish Ghosh
{"title":"Variability on the chiro-optical response of helically arranged metallic nanoparticles","authors":"Haobijam Johnson Singh, Ambarish Ghosh","doi":"10.1109/ICEMELEC.2014.7151198","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151198","url":null,"abstract":"We have studied the effects of geometrical variability on the chiro-optical response of helically arranged metal nanoparticles. A semi-analytical approach based on coupled dipole approximation model was used to study the effects of variation in shape, size, position, spacing and orientation of the metal nanoparticles. Within the extent of geometrical variability studied in our model, we found the chiro-optical response did not depend strongly on the size, position and spacing for either spherical or non spherical (ellipsoid) metal nanoparticles. On the other hand, the variability in the orientation of the ellipsoids can have significant effects on the chiro-optical response. These variability issues need to be taken into consideration in designing novel photonic polarization devices, as well as the optical system relevant for their investigation.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131165333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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