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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Fabrication of free-standing PEDOT:PSS nanofiber mats using electrospinning 静电纺丝法制备独立式PEDOT:PSS纳米纤维垫
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151196
K. Khanum, S. Hegde, Praveen C Ramamurthy
{"title":"Fabrication of free-standing PEDOT:PSS nanofiber mats using electrospinning","authors":"K. Khanum, S. Hegde, Praveen C Ramamurthy","doi":"10.1109/ICEMELEC.2014.7151196","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151196","url":null,"abstract":"In this work, a free-standing nanofibers mat of conducting polymer, Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) is fabricated. PEDOT:PSS solution is blended with widely studied water soluble polymers, poly vinyl alcohol (PVA) and poly ethylene oxide (PEO), and is electrospun. Electrospinning parameters such as applied voltage and flow rate are optimized and fibers of diameter 200-300 nm are obtained, as characterized by scanning electron microscopy. Further, ternary blends are prepared by increasing the PEDOT:PSS content with respect to PEO and PVA, and uniform fibers with diameter of less than 200 nm are obtained. Fiber mats are analyzed using contact angle measurement and change in hydrophilicity with respect to increase in PEDOT:PSS concentration is studied.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126423994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study 不同钝化方式AlGaN/GaN hemt的反漏电流分析:一个案例研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151172
Anushree Tomer, S. Dayal, Sunil Sharma, H. Arora, Sonalee Kapoor, D. S. Rawal, S. Vinayak
{"title":"Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study","authors":"Anushree Tomer, S. Dayal, Sunil Sharma, H. Arora, Sonalee Kapoor, D. S. Rawal, S. Vinayak","doi":"10.1109/ICEMELEC.2014.7151172","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151172","url":null,"abstract":"The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism behind this behavior, the role of Poole-Frenkel emission on gate reverse leakage current for both the types of passivation schemes was investigated.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132487329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of NBE emission enhancement of ZnO nanorods by changing the surface property of ultrathin Ag interlayer 改变超薄银层表面特性对ZnO纳米棒NBE发射增强的研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151155
A. Pal, D. Mohan
{"title":"Study of NBE emission enhancement of ZnO nanorods by changing the surface property of ultrathin Ag interlayer","authors":"A. Pal, D. Mohan","doi":"10.1109/ICEMELEC.2014.7151155","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151155","url":null,"abstract":"Surface plasmon-enhanced near-band-edge (NBE) emission of ZnO nanorods (NRs) array was studied after growing on ultra-thin Ag film of mass thickness 1 nm. Prior to the growth, Ag films were annealed at 100 and 250 °C. Annealing at 100 °C lead to the formation of smaller size of Ag nanoparticles with higher particle number density facilitating the vertical growth of higher density of ZnO NRs with high aspect ratio. The observation of predominant (002) plane from X-ray diffraction confirmed the preferential growth of ZnO nanorods on Ag films. The shape, orientation, diameter and number particles density of ZnO NRs are investigated by scanning electron microscopy (SEM). The photoluminescence (PL) spectra reveals the enhancement of NBE emission of ZnO NRs due to the transfer of electrons from Ag to ZnO and the resonance coupling of surface plasmon energy with ZnO emission. The evolution of multiple, low intense side bands in visible rsgion are due to shallow trap levels. Moreover, the absence of broad defect level emission peak indicating the high optical quality of ZnO NRs which could be applicable for UV LEDs.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127689175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of gate leakage current in ultra-thin oxide grown by high water vapor pressure thermal oxidation on 4H-SiC 4H-SiC高水蒸汽压热氧化超薄氧化物栅漏电流分析
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151195
Madhup Shukla, N. Dasgupta
{"title":"Analysis of gate leakage current in ultra-thin oxide grown by high water vapor pressure thermal oxidation on 4H-SiC","authors":"Madhup Shukla, N. Dasgupta","doi":"10.1109/ICEMELEC.2014.7151195","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151195","url":null,"abstract":"Ultra-thin SiO2 layers were grown on n-type 4H-SiC by thermal oxidation in high pressure water vapor ambient. The gate leakage current mechanism at low electric fields and different temperatures was studied. The presence of direct tunneling (DT) and Schottky emission (SE) current mechanisms was observed, with DT dominating at low temperature region of up to 393 K and a combination of DT and SE present at higher temperatures of more than 393 K. The effective barrier height between SiC Fermi level and SiO2 conduction band edge was extracted by fitting the DT model to the experimental gate oxide leakage current density vs. gate oxide electric field curve. It is shown that effective barrier height decreased with increase in temperature and increase in SiC/SiO2 interface state density (Dit), giving rise to a higher DT current.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116804445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance 圆柱环绕双栅(CSDG) mosfet的材料工程，以提高静电完整性和射频性能
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151128
Jay Hind K. Verma, Mridula Gupta, S. Haldar, R. Gupta
{"title":"Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance","authors":"Jay Hind K. Verma, Mridula Gupta, S. Haldar, R. Gupta","doi":"10.1109/ICEMELEC.2014.7151128","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151128","url":null,"abstract":"This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of size on the scattering properties of silica nanoparticles 粒径对二氧化硅纳米颗粒散射特性的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151131
Sonali Das, A. Kundu, S. M. Hossain, H. Saha, S. Datta
{"title":"Effect of size on the scattering properties of silica nanoparticles","authors":"Sonali Das, A. Kundu, S. M. Hossain, H. Saha, S. Datta","doi":"10.1109/ICEMELEC.2014.7151131","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151131","url":null,"abstract":"The effect of size on the scattering properties of silica nanoparticles on glass has been presented here. Silica nanoparticles of two different sizes (~50 nm and ~300 nm diameter) have been synthesized by a modified Stober technique and applied by spin coating on glass surface. Scattering properties of the nanoparticles have been studied experimentally. It is seen that larger nanoparticles have a higher scattering efficiency, which validates the simulation results obtained using Lumerical FDTD Solutions. As silica nanoparticles are essentially lossless in the AM1.5G solar spectrum, they will be (for solar cell applications) an alternative, as scatterers, to lossy metal nanoparticles. Their scattering efficiency further enhances upon them embedding in a medium. Two possible configurations of integrating silica nanoparticles with amorphous silicon solar cells are also presented.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129453947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance comparison of bulk and SOI planar junctionless SONOS memory 块体和SOI平面无结SONOS存储器的性能比较
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151210
Rajesh Singh Lodhi, Somit Pandey, Chitrakant Sahu, Jawar Singh
{"title":"Performance comparison of bulk and SOI planar junctionless SONOS memory","authors":"Rajesh Singh Lodhi, Somit Pandey, Chitrakant Sahu, Jawar Singh","doi":"10.1109/ICEMELEC.2014.7151210","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151210","url":null,"abstract":"In this paper, we have demonstrated the performance analysis of a planar junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) memory cell implemented on the bulk and silicon-on-insulator (SOI) substrate wafer. Both cells are simulated using extensive two dimensional device simulator and compared on the basis of improved memory characteristics. The JL SOI SONOS exhibits larger memory window within a specified programming time as compared with the JL bulk type. The erasing efficiency of the JL bulk SONOS is better due to incorporation of carriers from the substrate end and it also has the advantage of tunable channel layer that can be controlled by substrate doping.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126286176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Variability on the chiro-optical response of helically arranged metallic nanoparticles 螺旋排列金属纳米颗粒的旋光响应变异性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151198
Haobijam Johnson Singh, Ambarish Ghosh
{"title":"Variability on the chiro-optical response of helically arranged metallic nanoparticles","authors":"Haobijam Johnson Singh, Ambarish Ghosh","doi":"10.1109/ICEMELEC.2014.7151198","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151198","url":null,"abstract":"We have studied the effects of geometrical variability on the chiro-optical response of helically arranged metal nanoparticles. A semi-analytical approach based on coupled dipole approximation model was used to study the effects of variation in shape, size, position, spacing and orientation of the metal nanoparticles. Within the extent of geometrical variability studied in our model, we found the chiro-optical response did not depend strongly on the size, position and spacing for either spherical or non spherical (ellipsoid) metal nanoparticles. On the other hand, the variability in the orientation of the ellipsoids can have significant effects on the chiro-optical response. These variability issues need to be taken into consideration in designing novel photonic polarization devices, as well as the optical system relevant for their investigation.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131165333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Ga flux and rf-power on homoepitaxial growth of single crystalline GaN films Ga通量和rf功率对单晶GaN薄膜同外延生长的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151149
T. C. Shibin Krishna, Neha Aggarwal, Monu Mishra, Govind Gupta, K. Maurya, M. Kaur, Sandeep Singh
{"title":"Effect of Ga flux and rf-power on homoepitaxial growth of single crystalline GaN films","authors":"T. C. Shibin Krishna, Neha Aggarwal, Monu Mishra, Govind Gupta, K. Maurya, M. Kaur, Sandeep Singh","doi":"10.1109/ICEMELEC.2014.7151149","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151149","url":null,"abstract":"We investigated the effect of Ga flux and plasma power on the homoepitaxial growth of GaN epitaxial films by Molecular Beam Epitaxy (MBE) on MOCVD-grown GaN templates on c-sapphire substrates. The grown GaN films were characterized by several techniques to assess their structural and morphological properties. The surface morphology, dislocation densities and crystalline quality were found to be contingent on two parameters namely, Ga flux and the RF-plasma power. It was observed that, on increasing the Ga flux at constant rf-power, the crystalline quality as well as the surface morphology of the GaN film improved. On increasing the plasma power at low Ga flux, the crystallinity of the grown homoepitaxial film further enhanced significantly, but the surface roughness slightly increased due to the formation of hexagonal islands. The dependence of growth parameters on crystalline quality, threading dislocation densities, and surface morphology has been studied.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1377 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113994924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon on ferroelectric Tunnel FET (SOF-TFET) for low power application 低功耗应用的铁电隧道场效应晶体管(softfet)
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151189
Sangeeta Singh, Pawan Pal, R. Mittal, Anurag Tamia, P. Kondekar
{"title":"Silicon on ferroelectric Tunnel FET (SOF-TFET) for low power application","authors":"Sangeeta Singh, Pawan Pal, R. Mittal, Anurag Tamia, P. Kondekar","doi":"10.1109/ICEMELEC.2014.7151189","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151189","url":null,"abstract":"In this paper, we propose and investigate a novel device structure for silicon-on-ferroelectric Tunnel FET (SOFTFET) based on the negative capacitance effect of the ferroelectric layer. The conduction mechanism of proposed device is based on the combined effect of two mechanisms namely, tunnelling and negative capacitance effect. Thus, it achieves a steep subthreshold slope (SS) of 13.9 mV/dec at room temperature. The various device performance parameters are investigated for the proposed structure using 2D TCAD simulations incorporating the drift-diffusion and 1-D Landau's models. Extensive device simulation proves that the silicon on ferroelectric Tunnel FET is a great improvement in terms of lower SS value and reduced hysteretic losses compared to the conventional TFET.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131999201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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