Rajesh Singh Lodhi, Somit Pandey, Chitrakant Sahu, Jawar Singh
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引用次数: 0
摘要
在本文中，我们展示了在大块和绝缘体上硅(SOI)衬底晶圆上实现的平面无结(JL)氧化硅-氮化氧化物-硅(SONOS)存储电池的性能分析。采用广泛的二维器件模拟器对两个单元进行了模拟，并在改进的记忆特性的基础上进行了比较。与JL批量类型相比，JL SOI SONOS在指定的编程时间内显示出更大的内存窗口。JL块体SONOS的擦除效率更高，因为它从衬底端加入了载流子，并且它还具有可以通过衬底掺杂控制的可调谐沟道层的优点。
Performance comparison of bulk and SOI planar junctionless SONOS memory
In this paper, we have demonstrated the performance analysis of a planar junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) memory cell implemented on the bulk and silicon-on-insulator (SOI) substrate wafer. Both cells are simulated using extensive two dimensional device simulator and compared on the basis of improved memory characteristics. The JL SOI SONOS exhibits larger memory window within a specified programming time as compared with the JL bulk type. The erasing efficiency of the JL bulk SONOS is better due to incorporation of carriers from the substrate end and it also has the advantage of tunable channel layer that can be controlled by substrate doping.
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