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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Graphene nanobelts films for highly sensitive, transparent and flexible pressure and strain resistive sensors 石墨烯纳米带薄膜用于高灵敏度，透明和灵活的压力和应变电阻传感器
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151216
A. Alaferdov, R. Savu, S. Račkauskas, T. Rackauskas, M. A. Canesqui, S. Moshkalev
{"title":"Graphene nanobelts films for highly sensitive, transparent and flexible pressure and strain resistive sensors","authors":"A. Alaferdov, R. Savu, S. Račkauskas, T. Rackauskas, M. A. Canesqui, S. Moshkalev","doi":"10.1109/ICEMELEC.2014.7151216","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151216","url":null,"abstract":"New nanostructured material, multi-layer graphene nanobelts, was used to form a thin conductive flexible transparent film used as sensitive layer in a resistive wearable sensor able to detect pressure and strain with high sensitivity and low power consumption.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"59 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120998090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Admittance spectroscopy and capacitance dispersion of AlGaN/GaN hetero-structures AlGaN/GaN异质结构的导纳光谱和电容色散
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151157
J. Kaushik, V. R. Balakrishnan, B. Panwar, R. Muralidharan
{"title":"Admittance spectroscopy and capacitance dispersion of AlGaN/GaN hetero-structures","authors":"J. Kaushik, V. R. Balakrishnan, B. Panwar, R. Muralidharan","doi":"10.1109/ICEMELEC.2014.7151157","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151157","url":null,"abstract":"Admittance spectroscopy of pristine AlGaN/GaN metal-semiconductor interface reveals the distributed trap activation energy in the order of 0.24 eV by mercury probe capacitance-voltage (C-V) measurements. The trap densities of states (Dit) of these traps were extracted in the range of ~1.9×1012 eV-1cm-2 with the reverse bias voltage ranging from -5 Volts to 0 Volt. A very good fitting of admittance spectra (G/ω) was obtained by using the time constants of these traps. The dispersion in the capacitance was corrected to obtain an accurate depth profile of the hetero-structures.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125081254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave pulse-assisted wet chemical synthesis of ZnO nanoparticles with excellent UV emission 微波脉冲辅助湿法合成具有优异紫外发射特性的ZnO纳米粒子
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151181
A. Oudhia, A. Choudhary
{"title":"Microwave pulse-assisted wet chemical synthesis of ZnO nanoparticles with excellent UV emission","authors":"A. Oudhia, A. Choudhary","doi":"10.1109/ICEMELEC.2014.7151181","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151181","url":null,"abstract":"ZnO nanoparticles (ZNPs) were synthesized by wet chemical method using poly vinyl alcohol (PVA) templates. Uniform growth, high yield and excellent optical properties were observed in ZNPs synthesized under pulsed microwave irradiation (PMW). Moreover the dangling bonds of ZNPs prepared under PMW were passivated more effectively than in samples prepared without it. Strong UV emission peaks at ~ 360 nm and 380 nm, along with a feeble defect-related visible emission peak at ~ 465 nm, were observed in the room temperature (RT) photoluminescence (PL) spectra of ZNPs. Observation of two distinct excitonic peaks in RT UV-vis optical absorbance spectra and high UV-to-visible PL intensity ratio show high quality of ZNPs prepared by the present method. FTIR spectra were employed to explain the surface passivation mechanism of PVA.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126278874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Process-induced-strain maximization of nano-scale silicon-on-sapphire high-k gate-dielectric MOSFETs by adjusting device aspect ratio 通过调整器件长宽比实现纳米级蓝宝石上硅高k栅极介电mosfet的工艺诱导应变最大化
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151159
Sulagna Chatterjee
{"title":"Process-induced-strain maximization of nano-scale silicon-on-sapphire high-k gate-dielectric MOSFETs by adjusting device aspect ratio","authors":"Sulagna Chatterjee","doi":"10.1109/ICEMELEC.2014.7151159","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151159","url":null,"abstract":"In the current paper, a systematic study is presented of step-by-step process-induced stress variation of a Sapphire/Silicon/high-k MOSFET, for various aspect ratios, W/L. A substantial value of compressive stress of about 1 GPa, suitable for hole mobility enhancement, has been obtained. It is observed that the nature of the induced stress depends heavily on device dimensions. The study has been carried out for gate lengths ranging from 100 nm to 10 nm. For a particular gate length, a definite range of W/L ratios has been detected for which the process-induced stress remains uniaxial and therefore acceptable. It is also shown that, for smaller gate lengths the acceptable range of W/L ratios expands, whereas it shrinks towards the higher ratios only, for longer gate lengths.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132361447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film anodized titania nanotubes-based oxygen sensor 薄膜阳极氧化二氧化钛纳米管氧传感器
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151130
A. Viegas, Debaditya Chatterjee, T. Choudhury, S. Raghavan, N. Bhat
{"title":"Thin film anodized titania nanotubes-based oxygen sensor","authors":"A. Viegas, Debaditya Chatterjee, T. Choudhury, S. Raghavan, N. Bhat","doi":"10.1109/ICEMELEC.2014.7151130","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151130","url":null,"abstract":"Anodized titania, synthesized on oxidized silicon substrate, has been used as oxygen gas sensor. The as-anodized films resulted in a sensitivity of 5756% at 125°C, when exposed to 100% oxygen. The gas-sensing performance of anodized films has been evaluated with post-anodization treatment in de-ionized water and aqueous ammonia solution. The sensitivity increases to 8646% and 16599%, with post-treatment in aqueous ammonia solution and de-ionized water, respectively. This is attributed to increase surface area and activation during the post- anodization treatment. The repeatability of sensor performance has also been evaluated, and it is observed that the de-ionized water treated film is unstable for repeated sensing, possibly due to some structural modifications.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115323458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical study of the threshold voltage of TFETs with localized charges 局域电荷tfet阈值电压的数值研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151150
R. Vishnoi, M. J. Kumar
{"title":"Numerical study of the threshold voltage of TFETs with localized charges","authors":"R. Vishnoi, M. J. Kumar","doi":"10.1109/ICEMELEC.2014.7151150","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151150","url":null,"abstract":"In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO2 interface of constant density spread over different lengths.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114622336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of temperature effects in a surface-potential based ASM-HEMT model 基于表面电位的ASM-HEMT模型中温度效应的模拟
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151197
S. Ghosh, K. Sharma, S. Agnihotri, Y. Chauhan, S. Khandelwal, T. Fjeldly, F. M. Yigletu, B. Iñíguez
{"title":"Modeling of temperature effects in a surface-potential based ASM-HEMT model","authors":"S. Ghosh, K. Sharma, S. Agnihotri, Y. Chauhan, S. Khandelwal, T. Fjeldly, F. M. Yigletu, B. Iñíguez","doi":"10.1109/ICEMELEC.2014.7151197","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151197","url":null,"abstract":"Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116435800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Analysis and modeling of quantum capacitance in III-V transistors III-V型晶体管中量子电容的分析与建模
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151139
A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, Y. Chauhan
{"title":"Analysis and modeling of quantum capacitance in III-V transistors","authors":"A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, Y. Chauhan","doi":"10.1109/ICEMELEC.2014.7151139","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151139","url":null,"abstract":"We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122027827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of solder based self assembled 3D micro scale structures via surface evolver 基于表面演化器的焊料自组装三维微尺度结构研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151135
Neha Oraon, M. Rao
{"title":"Study of solder based self assembled 3D micro scale structures via surface evolver","authors":"Neha Oraon, M. Rao","doi":"10.1109/ICEMELEC.2014.7151135","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151135","url":null,"abstract":"Surface-Evolver is an interactive program used to study surface profiles that are influenced by surface tension. The tool is an open source software, developed by Professor Kenneth Brakke in Susquehanna University, USA. Solder based self assembled (SBSA) 3D structure was studied previously via experiments using lithography, deposition, wet etching, and dip soldering methods. SBSA 3D structure has wide applications which includes 3D packaging, 3D antenna design and other emerging areas. To completely study SBSA technology via experiments that are infrastructure dependent is not feasible, hence simulation study via Surface-Evolver is discussed in this paper. Simulation studies to understand the variations in forming 3D structures via Surface-Evolver is discussed. The SBSA 3D structure is represented by labeling vertices, edges, faces and volume in the simulation tool. The energy applied to the body defined, includes surface tension, and gravity. The minimization is completed by evolving the surface by energy gradient method. In this paper, the effect of design parameters such as gap size between metal patterns, and solder thickness on the formation of SBSA 3D structures are studied. The design parameters are analyzed for truncated square pyramid (TSP) and open cube (OC) 3D structures using Surface-Evolver tool.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124123693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved parameter extraction technique for GAN HEMT's small signal model 改进的GAN HEMT小信号模型参数提取技术
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151144
Umakant Goyal, M. Mishra
{"title":"Improved parameter extraction technique for GAN HEMT's small signal model","authors":"Umakant Goyal, M. Mishra","doi":"10.1109/ICEMELEC.2014.7151144","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151144","url":null,"abstract":"We have investigated the influence of the reverse transfer conductance Rgd to extract the small signal parameters of GaN high electron mobility transistors (HEMTs) at microwave frequencies. In this paper a simplified method for extracting the small-signal equivalent circuit elements of HEMTs by means of measurements of scattering parameters only is presented. We have calculated the improvement in terms of first and second order error by means of inclusion of a gate drain resistance Rgd into the model. The validity of this method was verified on a set of HEMTs having different gate widths tested on wafer at several biases.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126190544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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