III-V型晶体管中量子电容的分析与建模

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151139

A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, Y. Chauhan

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引用次数: 2

摘要

我们提出了一个计算电容的物理紧凑模型，包括计算III-V场效应管电荷质心的物理模型。我们用费米-狄拉克统计量考虑了从电荷解析Schrödinger-Poisson解中得到的两个能量子带。用数值装置仿真数据对模型进行了验证，得到了较好的匹配结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis and modeling of quantum capacitance in III-V transistors

We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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