Numerical study of the threshold voltage of TFETs with localized charges

Abstract

In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO2 interface of constant density spread over different lengths.