基于表面电位的ASM-HEMT模型中温度效应的模拟

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151197

S. Ghosh, K. Sharma, S. Agnihotri, Y. Chauhan, S. Khandelwal, T. Fjeldly, F. M. Yigletu, B. Iñíguez

{"title":"基于表面电位的ASM-HEMT模型中温度效应的模拟","authors":"S. Ghosh, K. Sharma, S. Agnihotri, Y. Chauhan, S. Khandelwal, T. Fjeldly, F. M. Yigletu, B. Iñíguez","doi":"10.1109/ICEMELEC.2014.7151197","DOIUrl":null,"url":null,"abstract":"Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Modeling of temperature effects in a surface-potential based ASM-HEMT model\",\"authors\":\"S. Ghosh, K. Sharma, S. Agnihotri, Y. Chauhan, S. Khandelwal, T. Fjeldly, F. M. Yigletu, B. Iñíguez\",\"doi\":\"10.1109/ICEMELEC.2014.7151197\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151197\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

在这里，我们提出了基于表面电位的“高电子迁移率晶体管高级Spice模型”(ASM-HEMT)对AlGaN/GaN hemt的温度效应的建模。我们提取了该模型的迁移率、饱和速度、截止电压和接入电阻参数的温度依赖关系。这使得在多个温度下精确建模I-V, gm和gds。我们的模型与实测数据进行了比较，结果表明，该模型在很宽的温度范围内具有很好的拟合效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling of temperature effects in a surface-potential based ASM-HEMT model

Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

自引率

0.00%

发文量