{"title":"局域电荷tfet阈值电压的数值研究","authors":"R. Vishnoi, M. J. Kumar","doi":"10.1109/ICEMELEC.2014.7151150","DOIUrl":null,"url":null,"abstract":"In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO2 interface of constant density spread over different lengths.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Numerical study of the threshold voltage of TFETs with localized charges\",\"authors\":\"R. Vishnoi, M. J. Kumar\",\"doi\":\"10.1109/ICEMELEC.2014.7151150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO2 interface of constant density spread over different lengths.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical study of the threshold voltage of TFETs with localized charges
In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO2 interface of constant density spread over different lengths.
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