2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献_第2页

Analysis of fast and slow trap states on electrical performance of AlGaN/GaN HEMTs 快、慢阱态对AlGaN/GaN hemt电性能的影响分析

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151145

J. Kaushik, V. R. Balakrishnan, B. Panwar, R. Muralidharan

引用次数: 2

A novel back gated GaN/AlGaN HEMT structure for biological sensing applications 用于生物传感应用的新型后门控GaN/AlGaN HEMT结构

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151151

Shruti Kejriwal, R. Vishnoi, A. Dhawan

引用次数: 1

Simulation study of the electrical behavior of bottom contact organic thin film transistors 底接触有机薄膜晶体管电学行为的仿真研究

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151133

F. Ana, Najeeb ud din HAKIM

引用次数: 3

Growth of high quality InN films and nano-rods grown on GaN nano wall network 在GaN纳米壁网络上生长高质量InN薄膜和纳米棒

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151191

Malleswararao Tangi, Arpan De, S. M. Shivaprasad

引用次数: 0

Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis MBE生长AlGaAs/GaAs异质结构的综合研究:结构和成分分析

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151137

Rahul Kumar, P. Mukhopadhyay, S. Jana, A. Bag, S. Ghosh, S. Das, M. K. Mahata, D. Biswas

引用次数: 2

Impact of morphology on charge carrier mobility in top gate C60 organic field effect transistors 形貌对顶栅C60有机场效应晶体管载流子迁移率的影响

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151134

A. Nigam, G. Schwabegger, Rizwan Ahmed, C. Simbrunner, H. Sitter, M. Premaratne, V. Rao

{"title":"Impact of morphology on charge carrier mobility in top gate C60 organic field effect transistors","authors":"A. Nigam, G. Schwabegger, Rizwan Ahmed, C. Simbrunner, H. Sitter, M. Premaratne, V. Rao","doi":"10.1109/ICEMELEC.2014.7151134","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151134","url":null,"abstract":"Charge carrier mobility is a critical parameter in organic field effect transistors and it is strongly influenced by morphology and structure of the involved organic materials. In this work, we present a study on impact of grain size and surface roughness of the active layer on the mobility in top gate n-type C60 organic field effect transistors. The morphology was varied by changing the substrate temperature during C60 deposition from 100 °C to 200 °C. It is found that for the investigated top gate devices, the mobility does not strictly increase with increasing grain size, which is in disagreement with the trends reported for bottom gate OFETs. The observation is explained by the fact that the increasing grain size of C60 leads to a concurrent increase in the surface roughness, which negatively impacts the charge carrier mobility in the active channel of the OFET. As a result an optimum of the mobility is reached at 150 °C of substrate temperature where grains are already quite big, but surface roughness is still not hindering the transport.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123124232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasmonic enhancement of photocurrent in GaN based UV photodetectors 氮化镓基紫外光电探测器中光电流的等离子体增强

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151138

A. Shetty, Kamal John Sundar, B. Roul, S. Mukundan, G. Chandan, L. Mohan, Ambarish Ghosh, K. Vinoy, S. .. Krupanidhi

引用次数: 7

Influence of gate and drain bias on the bias-stress stability of flexible organic thin-film transistors 栅极和漏极偏置对柔性有机薄膜晶体管偏置应力稳定性的影响

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151183

Sibani Bisoyi, S. P. Tiwari, U. Zschieschang, H. Klauk

引用次数: 0

Investigation on silver nanoparticles-based plasmonic antireflection and its impact on electrical performance of mono c-Si solar cells 纳米银基等离子体增透及其对单晶硅太阳能电池电性能影响的研究

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151167

H. Singh, K. Sandeep, Mallikarjuna Chary, A. Balraj, Pratibha Sharma, C. Solanki

{"title":"Investigation on silver nanoparticles-based plasmonic antireflection and its impact on electrical performance of mono c-Si solar cells","authors":"H. Singh, K. Sandeep, Mallikarjuna Chary, A. Balraj, Pratibha Sharma, C. Solanki","doi":"10.1109/ICEMELEC.2014.7151167","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151167","url":null,"abstract":"Silver nanoparticles (NP's) were fabricated from silver ultrathin film deposited by e-beam evaporation using an optimized process, followed by rapid thermal annealing (RTP) done at 4000C for 1 minute on mono c-Si solar cells. The optical reflection and the electrical performance of the solar cells with and without silver nanoparticles were studied and analyzed. Incorporating Ag NP's improves the antireflection in IR wavelength range (700 nm-1200 nm) which is reflected as 7-8 % improvement in external quantum efficiency (EQE) in this range with weighted total reflectance (TWR) of 7 %. However, the high backscattering from NP's which results in high reflection in UV-Visible range, reduces the EQE in this wavelength range. The short circuit current density (extracted from EQE) is reduced from 35.5 mA/cm2 to 31.4 mA/cm2 though the Sun's Voc measurement suggests that there is relatively no impact on open circuit voltage and pseudo FF due to SiNx + NP's-based antireflection. This investigation suggests that the NP's combined with SiNx ARC is good for solar cell performance improvement in the IR range but not for broad wavelength range (300 nm-1200 nm) which is important for c-Si solar cells. Thus, the use of nanoparticles on the front surface of the solar cells cannot be utilized efficiently; however its back scattering property may be utilized using NP's at the back surface of the mono c-Si-based solar cell.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"74 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126211073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dependence of field plate parameters on dielectric constant in a 4H-SiC Schottky diode 4H-SiC肖特基二极管中场极板参数与介电常数的关系

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151146

B. Shankar, Sanjeev K. Gupta, W. R. Taube, J. Akhtar

引用次数: 2