在GaN纳米壁网络上生长高质量InN薄膜和纳米棒

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151191

Malleswararao Tangi, Arpan De, S. M. Shivaprasad

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引用次数: 0

摘要

本文介绍了用等离子体辅助分子束外延(PAMBE)在氮化镓纳米壁网(NWN)模板上形成二维平面膜和纳米棒阵列的两步动力学控制单生长过程。表面和体衍射研究表明，与在裸蓝宝石或氮化镓涂层上形成的杆和膜相比，这些杆和膜具有高质量的结构和光学特性。

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Growth of high quality InN films and nano-rods grown on GaN nano wall network

A two step kinetically controlled single-growth process for the formation of InN 2D flat films and an array of nano rods (NRs) on GaN nano wall network (NWN) template by Plasma Assisted Molecular Beam Epitaxy (PAMBE) is demonstrated here. Surface and bulk diffraction studies reveal that the rods and film exhibit high quality structural and optical properties, in comparison to those formed on bare sapphire or GaN epilayer.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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