Impact of fringing fields in a p-channel junctionless transistor

Abstract

This paper investigates the effects of fringing field arising out of high-k (dielectric constant) gate insulator on the device performance of a p-channel double-gate junctionless transistor (p-DGJLT). The overall device performance of a p-DGJLT is degraded with such fringing field. This behavior is similar to its n-channel counterpart of similar dimension. The effects of spacers on both sides of high-k gate oxides are also studied for the device performance parameters, namely: drain current (ID), ON-state current (ION), threshold voltage (VT), subthreshold slope (SS) and drain-induced barrier lowering (DIBL). SS and DIBL are improved for the device in which spacer dielectrics are included. However, VT and ION are degraded with increase in spacer dielectric constant.