石墨氧化物诱导的cucnq纳米棒薄膜电导率增强

R. Basori, A. Raychaudhuri
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引用次数: 1

摘要

我们演示了一种简单的方法来增加cucnq纳米棒薄膜的电导,使用氧化石墨。通过化学方法在玻璃衬底上的预图像化电极上生长cucnq纳米棒,并使用生长后的纳米棒在室温下测量I-V。然后将氧化石墨(GO)分散到CuTCNQ纳米棒的薄膜上,从而修饰CuTCNQ的电导率。纳米棒薄膜的电导大约增加了一个数量级。电导的增加是由于电子电荷从氧化石墨转移到CuTCNQ,这已经从观察到的C≡N拉伸模式的频移得到证实,如在傅里叶变换红外光谱(FTIR)中所见。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphitic oxide-induced enhanced electrical conductance in CuTCNQ nanorod film
We demonstrate a simple method to increase the conductance of CuTCNQ nanorod film, using graphitic oxide. CuTCNQ nanorods are grown by a chemical method on prepatterned electrodes on glass substrate and as-grown nanorods are used to measure I-V at room temperature. The electrical conductance of CuTCNQ are then modified by graphitic oxide (GO) by dispersing it onto film of CuTCNQ nanorods. The conductance of the nanorod film is increased by approximately one order in magnitude. Increase in conductance occurs due to electronic charge transfer from graphitic oxide to CuTCNQ, which has been corroborated from the observed frequency shift of C≡N stretching mode, as seen in Fourier Transform Infrared Spectroscopy (FTIR).
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