J. Kaushik, V. R. Balakrishnan, B. Panwar, R. Muralidharan
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引用次数: 2
摘要
本文介绍了在AlGaN/GaN hemt中同时存在的快慢阱态的实验观察。通过跨导色散和导纳曲线检测到存在时间常数为0.1 ms ~ 0.1 s、活化能为0.3 eV~0.54 eV的陷阱。这些快速陷阱可能有助于AlGaN/GaN hemt中的高栅极泄漏电流。时间常数大于0.1 s的慢阱和快阱可能导致观察到的输出I-V特性的滞后。
Analysis of fast and slow trap states on electrical performance of AlGaN/GaN HEMTs
Experimental observations of simultaneous existence of fast and slow trap states in AlGaN/GaN HEMTs are presented here. The presence of traps with time constants (0.1 ms ~ 0.1 s) and activation energies (0.3 eV~0.54 eV) was detected from transconductance dispersion and admittance curves. These fast traps may assist the high gate leakage currents in AlGaN/GaN HEMTs. The slower traps having the time constants of more than 0.1 s, along with faster traps, may be responsible for hysteresis in the observed output I-V characteristics.
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