Growth of high quality InN films and nano-rods grown on GaN nano wall network

Abstract

A two step kinetically controlled single-growth process for the formation of InN 2D flat films and an array of nano rods (NRs) on GaN nano wall network (NWN) template by Plasma Assisted Molecular Beam Epitaxy (PAMBE) is demonstrated here. Surface and bulk diffraction studies reveal that the rods and film exhibit high quality structural and optical properties, in comparison to those formed on bare sapphire or GaN epilayer.