Impact of morphology on charge carrier mobility in top gate C60 organic field effect transistors

A. Nigam, G. Schwabegger, Rizwan Ahmed, C. Simbrunner, H. Sitter, M. Premaratne, V. Rao
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Abstract

Charge carrier mobility is a critical parameter in organic field effect transistors and it is strongly influenced by morphology and structure of the involved organic materials. In this work, we present a study on impact of grain size and surface roughness of the active layer on the mobility in top gate n-type C60 organic field effect transistors. The morphology was varied by changing the substrate temperature during C60 deposition from 100 °C to 200 °C. It is found that for the investigated top gate devices, the mobility does not strictly increase with increasing grain size, which is in disagreement with the trends reported for bottom gate OFETs. The observation is explained by the fact that the increasing grain size of C60 leads to a concurrent increase in the surface roughness, which negatively impacts the charge carrier mobility in the active channel of the OFET. As a result an optimum of the mobility is reached at 150 °C of substrate temperature where grains are already quite big, but surface roughness is still not hindering the transport.
形貌对顶栅C60有机场效应晶体管载流子迁移率的影响
载流子迁移率是有机场效应晶体管的一个重要参数,它受所涉及的有机材料的形态和结构的强烈影响。本文研究了n型n型C60有机场效应晶体管的晶粒尺寸和表面粗糙度对迁移率的影响。在C60沉积过程中,衬底温度从100℃变化到200℃,形貌发生了变化。研究发现,对于所研究的顶栅器件,迁移率并不严格随着晶粒尺寸的增加而增加,这与底栅ofet的趋势不一致。C60晶粒尺寸的增加导致表面粗糙度的增加,这对OFET有源通道中的载流子迁移率产生了负面影响。结果表明,在基体温度为150℃时迁移率达到最佳,此时晶粒已经相当大,但表面粗糙度仍然不妨碍迁移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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