发布求助
文献互助 智能选刊 最新文献

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

筛选
英文 中文
Charge-based modeling of channel material-engineered P-type double gate MOSFET 通道材料工程p型双栅MOSFET的电荷建模
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151141
V. Kumari, Aravindan Ilango, M. Saxena, Mridula Gupta
{"title":"Charge-based modeling of channel material-engineered P-type double gate MOSFET","authors":"V. Kumari, Aravindan Ilango, M. Saxena, Mridula Gupta","doi":"10.1109/ICEMELEC.2014.7151141","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151141","url":null,"abstract":"A physics-based, charge-based model for P-type Gaussian doped DG MOSFET is presented in this work. The developed model is also applicable to the investigation of the impact of channel material on the performance of p-type DG MOSFET. The reliability issues of the p-type MOSFET have also been demonstrated using both developed analytical model and simulated results. The performance degradation due to unwanted interface trap density in both p-type and n-type DG MOSFET are also compared in this work. In addition to this, the impact of the straggle range of Gaussian doping on the performance of silicon (Si)- and germanium (Ge)-based DG MOSFET (in terms of threshold voltage, DIBL and Ion/Ioff ratio) has also been investigated and compared.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122613310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low temperature Cu-Cu thermocompression bonding assisted by electrochemical desorption of a self-assembled monolayer 自组装单层的电化学解吸辅助低温Cu-Cu热压键合
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151165
Tamal Ghosh, V. Krishna, S. Singh
{"title":"Low temperature Cu-Cu thermocompression bonding assisted by electrochemical desorption of a self-assembled monolayer","authors":"Tamal Ghosh, V. Krishna, S. Singh","doi":"10.1109/ICEMELEC.2014.7151165","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151165","url":null,"abstract":"This paper reports low temperature Cu-Cu thermocompression bonding with the help of self-assembled monolayer (SAM) desorption. SAM layer protects copper from oxidation. It should be desorbed just before bonding. The desorption was carried out using cyclic voltammetry in aqueous potassium hydroxide (KOH) solution. Contact angle measurements carried out before and after desorption indicates successful desorption of SAM. The bonding was carried out at 150 °C and has yielded in excellent bond strength of 520 N.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122386845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphitic oxide-induced enhanced electrical conductance in CuTCNQ nanorod film 石墨氧化物诱导的cucnq纳米棒薄膜电导率增强
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151170
R. Basori, A. Raychaudhuri
{"title":"Graphitic oxide-induced enhanced electrical conductance in CuTCNQ nanorod film","authors":"R. Basori, A. Raychaudhuri","doi":"10.1109/ICEMELEC.2014.7151170","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151170","url":null,"abstract":"We demonstrate a simple method to increase the conductance of CuTCNQ nanorod film, using graphitic oxide. CuTCNQ nanorods are grown by a chemical method on prepatterned electrodes on glass substrate and as-grown nanorods are used to measure I-V at room temperature. The electrical conductance of CuTCNQ are then modified by graphitic oxide (GO) by dispersing it onto film of CuTCNQ nanorods. The conductance of the nanorod film is increased by approximately one order in magnitude. Increase in conductance occurs due to electronic charge transfer from graphitic oxide to CuTCNQ, which has been corroborated from the observed frequency shift of C≡N stretching mode, as seen in Fourier Transform Infrared Spectroscopy (FTIR).","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124072666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
What decides the mobility of small molecule-based organic semiconductors in organic thin film transistors ? 在有机薄膜晶体管中，是什么决定了小分子有机半导体的迁移率?
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151194
V. Rani, Sarita Yadav, Akanksha Sharma, Subhasis Ghosh
{"title":"What decides the mobility of small molecule-based organic semiconductors in organic thin film transistors ?","authors":"V. Rani, Sarita Yadav, Akanksha Sharma, Subhasis Ghosh","doi":"10.1109/ICEMELEC.2014.7151194","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151194","url":null,"abstract":"The design of organic molecules-based devices with higher charge carrier mobility requires an in-depth understanding of elementary processes relevant to transport of charge carriers in organic thin films. Carrier mobility is large if there is a significant overlap between the molecular orbitals. Here, the exact role of chemical structure and arrangement of molecules in their crystal structure on the performance of metal-free (H2Pc)- and metal phthalocyanines (ZnPc, CuPc and F16CuPc)-based organic thin film transistors (OEFTs) has been observed by a combined experimental and theoretical study.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127816048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Day-ahead prediction of solar power output for grid-connected solar photovoltaic installations using Artificial Neural Networks 利用人工神经网络预测并网太阳能光伏发电装置的日前输出
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151201
R. Ehsan, S. P. Simon, P. R. Venkateswaran
{"title":"Day-ahead prediction of solar power output for grid-connected solar photovoltaic installations using Artificial Neural Networks","authors":"R. Ehsan, S. P. Simon, P. R. Venkateswaran","doi":"10.1109/ICEMELEC.2014.7151201","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151201","url":null,"abstract":"Solar Photovoltaic (PV) systems are gaining popularity as a form of alternative energy with increased environmental awareness, renewable energy usage and concern for energy security. Lack of area-specific forecasts for the power output of grid-connected photovoltaic system hinders tapping solar power on a large scale. The objective of this paper is to estimate the profile of produced power of a grid-connected 20 kWp solar power plant in a reputed manufacturing industry located in Tiruchirappalli, India [10° 44' 42.3816\" N, 78° 47' 9.4524\" E]. An Artificial Neural Network (ANN)-based model is proposed in this paper. An experimental database of solar power output (from 7th January 2014 to 10th February 2014) has been used for training the ANN. Simulations were carried out with the Neural Network Fitting Toolbox of MATLAB software. Day-Ahead Forecasting results indicate that the proposed model performs well with great accuracy and efficiency. Statistical error analysis in terms of Mean Absolute Percentage Error (MAPE) was conducted and the best result was found to be 0.2887%. Reliable area-specific solar power production map can provide better utilization of solar energy resource and help in power system management.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129173332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Impact of fringing fields in a p-channel junctionless transistor p沟道无结晶体管中边缘场的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151153
R. K. Baruah, R. Paily
{"title":"Impact of fringing fields in a p-channel junctionless transistor","authors":"R. K. Baruah, R. Paily","doi":"10.1109/ICEMELEC.2014.7151153","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151153","url":null,"abstract":"This paper investigates the effects of fringing field arising out of high-k (dielectric constant) gate insulator on the device performance of a p-channel double-gate junctionless transistor (p-DGJLT). The overall device performance of a p-DGJLT is degraded with such fringing field. This behavior is similar to its n-channel counterpart of similar dimension. The effects of spacers on both sides of high-k gate oxides are also studied for the device performance parameters, namely: drain current (ID), ON-state current (ION), threshold voltage (VT), subthreshold slope (SS) and drain-induced barrier lowering (DIBL). SS and DIBL are improved for the device in which spacer dielectrics are included. However, VT and ION are degraded with increase in spacer dielectric constant.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132669169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication and release of SU-8 structures on soft substrate 软基上SU-8结构的制备与释放
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151147
Richa Mishra, T. K. Bhattacharyya, T. K. Maiti
{"title":"Fabrication and release of SU-8 structures on soft substrate","authors":"Richa Mishra, T. K. Bhattacharyya, T. K. Maiti","doi":"10.1109/ICEMELEC.2014.7151147","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151147","url":null,"abstract":"A recent trend in biosensors and biomedical devices is the fabrication of compact, high aspect ratio and free-standing biocompatible structures with application as force sensors, micro-needle-based drug delivery systems, array of chemical sensors, etc. SU-8 photoresist is a promising candidate to fulfill such structure. Poly(Dimethylsiloxane) has been used as the sacrificial layer to successfully release the SU-8 structures without the use of any specialized equipment, like a dicing saw.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133239360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Material and mechanical characterization of PECVD deposited a-SiC:H with H2 dilution H2稀释PECVD沉积a-SiC:H的材料和力学特性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151188
U. Adithi, S. Deshpande, K. N. Bhat
{"title":"Material and mechanical characterization of PECVD deposited a-SiC:H with H2 dilution","authors":"U. Adithi, S. Deshpande, K. N. Bhat","doi":"10.1109/ICEMELEC.2014.7151188","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151188","url":null,"abstract":"In this paper, we report optical and mechanical properties of low temperature plasma enhanced chemical vapor-deposited (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) thin films. Initial screening of this process using hydrogen-dilution was performed with a two-level, three-parameter design of experiments (DOE) with eight samples. In this process regime, it was determined that the main parameters affecting silicon carbide (SiC) deposition were the RF power and the hydrogen flow rate. Based on the DOE results, a further set of four samples was prepared to modulate deposition rate and stoichiometry. Material characterization of these samples using Fourier transform infrared spectroscopy (FTIR), X-ray photolectron spectroscopy (XPS), surface profilometry and ellipsometry is presented. Further, to determine the mechanical properties, cantilevers were fabricated and characterized using scanning electron microscopy (SEM) and laser Doppler vibrometry (LDV). Based on the resonant frequency measurement and film density, the Young's modulus for the films was determined.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121403810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode 有机二极管稳态电流电压特性的多陷阱分布检测
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151136
S. M. H. Rizvi, B. Mazhari
{"title":"Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode","authors":"S. M. H. Rizvi, B. Mazhari","doi":"10.1109/ICEMELEC.2014.7151136","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151136","url":null,"abstract":"Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116724000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Subthreshold Analog/RF performance estimation of doping-less DGFET for ULP applications 用于ULP应用的无掺杂DGFET的亚阈值模拟/射频性能估计
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151211
Anup Kumar, Chitrakant Sahu, Jawar Singh
{"title":"Subthreshold Analog/RF performance estimation of doping-less DGFET for ULP applications","authors":"Anup Kumar, Chitrakant Sahu, Jawar Singh","doi":"10.1109/ICEMELEC.2014.7151211","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151211","url":null,"abstract":"In this paper, we report the potential of the doping-less (DL) double gate field effect transistor (DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated that the proposed DL-DGFET do not require any doping from source to drain region and it can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-mode (IM) DGFETs. The DL-DGFET achieves 1.8X and 2.75X cutoff frequency (fT), 1.7X and 3X maximum frequency of oscillation (fMAX) along with 10.5 and 18.6 dB improvement in intrinsic voltage gain (AVO) in comparison to conventional JL and non-underlap FETs, respectively. Simulation results revealed that the DL-DGFET alleviates the inherent trade-off between gain and bandwidth of nanodevices by 6X improvement in gain frequency product (GFP) over highly doped JL-DGFET due to significant reduction in parasitic capacitances.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"21 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114293262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信