2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献_第3页

Dependence of field plate parameters on dielectric constant in a 4H-SiC Schottky diode 4H-SiC肖特基二极管中场极板参数与介电常数的关系

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151146

B. Shankar, Sanjeev K. Gupta, W. R. Taube, J. Akhtar

引用次数: 2

Plasmonic enhancement of photocurrent in GaN based UV photodetectors 氮化镓基紫外光电探测器中光电流的等离子体增强

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151138

A. Shetty, Kamal John Sundar, B. Roul, S. Mukundan, G. Chandan, L. Mohan, Ambarish Ghosh, K. Vinoy, S. .. Krupanidhi

引用次数: 7

Investigation on silver nanoparticles-based plasmonic antireflection and its impact on electrical performance of mono c-Si solar cells 纳米银基等离子体增透及其对单晶硅太阳能电池电性能影响的研究

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151167

H. Singh, K. Sandeep, Mallikarjuna Chary, A. Balraj, Pratibha Sharma, C. Solanki

{"title":"Investigation on silver nanoparticles-based plasmonic antireflection and its impact on electrical performance of mono c-Si solar cells","authors":"H. Singh, K. Sandeep, Mallikarjuna Chary, A. Balraj, Pratibha Sharma, C. Solanki","doi":"10.1109/ICEMELEC.2014.7151167","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151167","url":null,"abstract":"Silver nanoparticles (NP's) were fabricated from silver ultrathin film deposited by e-beam evaporation using an optimized process, followed by rapid thermal annealing (RTP) done at 4000C for 1 minute on mono c-Si solar cells. The optical reflection and the electrical performance of the solar cells with and without silver nanoparticles were studied and analyzed. Incorporating Ag NP's improves the antireflection in IR wavelength range (700 nm-1200 nm) which is reflected as 7-8 % improvement in external quantum efficiency (EQE) in this range with weighted total reflectance (TWR) of 7 %. However, the high backscattering from NP's which results in high reflection in UV-Visible range, reduces the EQE in this wavelength range. The short circuit current density (extracted from EQE) is reduced from 35.5 mA/cm2 to 31.4 mA/cm2 though the Sun's Voc measurement suggests that there is relatively no impact on open circuit voltage and pseudo FF due to SiNx + NP's-based antireflection. This investigation suggests that the NP's combined with SiNx ARC is good for solar cell performance improvement in the IR range but not for broad wavelength range (300 nm-1200 nm) which is important for c-Si solar cells. Thus, the use of nanoparticles on the front surface of the solar cells cannot be utilized efficiently; however its back scattering property may be utilized using NP's at the back surface of the mono c-Si-based solar cell.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"74 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126211073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Charge-based modeling of channel material-engineered P-type double gate MOSFET 通道材料工程p型双栅MOSFET的电荷建模

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151141

V. Kumari, Aravindan Ilango, M. Saxena, Mridula Gupta

引用次数: 3

Influence of gate and drain bias on the bias-stress stability of flexible organic thin-film transistors 栅极和漏极偏置对柔性有机薄膜晶体管偏置应力稳定性的影响

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151183

Sibani Bisoyi, S. P. Tiwari, U. Zschieschang, H. Klauk

引用次数: 0

What decides the mobility of small molecule-based organic semiconductors in organic thin film transistors ? 在有机薄膜晶体管中，是什么决定了小分子有机半导体的迁移率?

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151194

V. Rani, Sarita Yadav, Akanksha Sharma, Subhasis Ghosh

引用次数: 1

Day-ahead prediction of solar power output for grid-connected solar photovoltaic installations using Artificial Neural Networks 利用人工神经网络预测并网太阳能光伏发电装置的日前输出

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151201

R. Ehsan, S. P. Simon, P. R. Venkateswaran

{"title":"Day-ahead prediction of solar power output for grid-connected solar photovoltaic installations using Artificial Neural Networks","authors":"R. Ehsan, S. P. Simon, P. R. Venkateswaran","doi":"10.1109/ICEMELEC.2014.7151201","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151201","url":null,"abstract":"Solar Photovoltaic (PV) systems are gaining popularity as a form of alternative energy with increased environmental awareness, renewable energy usage and concern for energy security. Lack of area-specific forecasts for the power output of grid-connected photovoltaic system hinders tapping solar power on a large scale. The objective of this paper is to estimate the profile of produced power of a grid-connected 20 kWp solar power plant in a reputed manufacturing industry located in Tiruchirappalli, India [10° 44' 42.3816\" N, 78° 47' 9.4524\" E]. An Artificial Neural Network (ANN)-based model is proposed in this paper. An experimental database of solar power output (from 7th January 2014 to 10th February 2014) has been used for training the ANN. Simulations were carried out with the Neural Network Fitting Toolbox of MATLAB software. Day-Ahead Forecasting results indicate that the proposed model performs well with great accuracy and efficiency. Statistical error analysis in terms of Mean Absolute Percentage Error (MAPE) was conducted and the best result was found to be 0.2887%. Reliable area-specific solar power production map can provide better utilization of solar energy resource and help in power system management.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129173332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Material and mechanical characterization of PECVD deposited a-SiC:H with H2 dilution H2稀释PECVD沉积a-SiC:H的材料和力学特性

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151188

U. Adithi, S. Deshpande, K. N. Bhat

引用次数: 1

Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode 有机二极管稳态电流电压特性的多陷阱分布检测

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151136

S. M. H. Rizvi, B. Mazhari

引用次数: 1

Subthreshold Analog/RF performance estimation of doping-less DGFET for ULP applications 用于ULP应用的无掺杂DGFET的亚阈值模拟/射频性能估计

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151211

Anup Kumar, Chitrakant Sahu, Jawar Singh

引用次数: 1