有机二极管稳态电流电压特性的多陷阱分布检测

S. M. H. Rizvi, B. Mazhari
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引用次数: 1

摘要

陷阱通常存在于有机半导体中,它们的存在明显地扭曲了有机二极管的电流-电压(I - V)特性。目前的工作描述了最近提出的G(V)技术在检测多个陷阱分布存在方面的应用。G - V特征显示高斯陷阱和指数陷阱的显著不同特征,这使得容易检测到不止一种类型的陷阱分布。数值模拟和实验结果表明,聚-(3-己基噻吩)(P3HT)和P3HT与[6,6]苯基C61丁酸甲酯(PCBM)共混物二极管存在不同分布的浅阱和深阱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.
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