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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Study of growth of in situ Ga-catalyzed AlGaAs nanostructures using MOVPE technique 利用MOVPE技术原位生长ga催化AlGaAs纳米结构的研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151186
R. Bag, J. Lohani, R. Tyagi, D. K. Pandya, R. Singh
{"title":"Study of growth of in situ Ga-catalyzed AlGaAs nanostructures using MOVPE technique","authors":"R. Bag, J. Lohani, R. Tyagi, D. K. Pandya, R. Singh","doi":"10.1109/ICEMELEC.2014.7151186","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151186","url":null,"abstract":"In situ Ga-catalyzed AlGaAs nanostructures have been grown by MOVPE. The effect of growth temperature on the shape, size, tapering, and spatial distribution of nanostructures has been investigated using the FESEM technique. Micro-PL measurements have been conducted to analyze the optical quality of the nanostructures. Aluminum composition of around 13% has been estimated by multiple peak-fitting of the PL spectrum.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127383061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanogap electrode formation by sacrificial layer technique 牺牲层法制备纳米间隙电极
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151156
S. Dhariwal, R. Prajesh, A. Agarwal
{"title":"Nanogap electrode formation by sacrificial layer technique","authors":"S. Dhariwal, R. Prajesh, A. Agarwal","doi":"10.1109/ICEMELEC.2014.7151156","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151156","url":null,"abstract":"This paper presents a controlled lateral etching-based technique for realizing nanogap structures. These structures have applications in different bio-medical/ biochemical sensors. The sensitivity of such sensors depends on the gap size. The method method uses single mask lithography, followed by etching for the first electrode material and lift-off for the second electrode material. Controlled under-etching of the first metal layer defines the gap between two electrodes. Aluminum (0.7 μm) as metal one and titanium (0.2 μm) as metal two was used for fabricating nano-gap electrodes. Gap of 90 nm was achieved using the present technique.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126557694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size and surrounding medium effects on plasmonic response of Au-Ag-Cu nanospheres 尺寸和周围介质对Au-Ag-Cu纳米球等离子体响应的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151175
A. Bansal, S. Verma
{"title":"Size and surrounding medium effects on plasmonic response of Au-Ag-Cu nanospheres","authors":"A. Bansal, S. Verma","doi":"10.1109/ICEMELEC.2014.7151175","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151175","url":null,"abstract":"The possible synthesis of multimetallic nanostructures formed by combining the individual noble metals has attracted a considerable attention because of their improved optical response and cost-effectiveness. In this study, the plasmonic response of Au-Ag-Cu trimetallic nanospheres has been investigated by using discrete dipole approximation (DDA). The size, and surrounding medium-dependent optical parameters such as localized surface plasmon resonance (LSPR) wavelength, relative contribution of scattering in the extinction (scattering yield), and full width at half maximum (FWHM), have been calculated for their possible use in cost-effective plasmonic applications. These optical parameters can be tuned from 400 to 600 nm in the visible region of the electromagnetic (EM) spectrum through change in size and surrounding medium. The calculated FWHM is enhanced more by trimetallic nanoparticles (NPs) than by individual and bimetallic NPs and, therefore, may be preferred for plasmonic solar cells in the visible region.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123722885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intermolecular energy transfer near plasmonic nanoshell 等离子体纳米壳附近的分子间能量传递
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151148
M. S. Shishodia, Soniya Juneja, B. Fainberg, A. Nitzan
{"title":"Intermolecular energy transfer near plasmonic nanoshell","authors":"M. S. Shishodia, Soniya Juneja, B. Fainberg, A. Nitzan","doi":"10.1109/ICEMELEC.2014.7151148","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151148","url":null,"abstract":"A novel theoretical approach is developed for treating energy transfer interactions between a donor and an acceptor molecule in the proximity of a nanoshell. Motivated from the diverse applications and rich plasmonic features of plasmonic nanoshell for example, tuning capability of Surface Plasmon (SP) frequencies, greater sensitivity to the dielectric environment, and controllable redirection of EM radiation, closed form expressions are derived for the amplification factor of nanoshell mediated intermolecular energy transfer. Closed form expressions derived in this manuscript can directly be used as formula for; designing SP based biosensors, calculating energy exchange between proteins and excitonic interactions in Quantum Dots (QDs).","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"64 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131879430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Understanding non-Gaussian velocity fluctuations in helical nano-propellers 理解螺旋纳米螺旋桨的非高斯速度波动
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151220
Arijit Ghosh, Ambarish Ghosh
{"title":"Understanding non-Gaussian velocity fluctuations in helical nano-propellers","authors":"Arijit Ghosh, Ambarish Ghosh","doi":"10.1109/ICEMELEC.2014.7151220","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151220","url":null,"abstract":"Helical magnetic nanopropellers have been a subject of active research in the last few years. In this work we present the details of the numerical calculation to model their motion in the presence of thermal fluctuations. Also pertaining to their possible use in microfluidic devices, we have included the effect of adjacent walls. The results of our numerical calculations show non-Gaussian features in the power spectrum of the propulsion velocity, in close resemblance with experimental observations.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131852776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Drain current model for SOI TFET considering source and drain side tunneling 考虑源极和漏极隧道作用的SOI TFET漏极电流模型
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151203
P. Pandey, R. Vishnoi, M. J. Kumar
{"title":"Drain current model for SOI TFET considering source and drain side tunneling","authors":"P. Pandey, R. Vishnoi, M. J. Kumar","doi":"10.1109/ICEMELEC.2014.7151203","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151203","url":null,"abstract":"In this paper, we have developed a 2-D model for the DC drain current of a tunneling field-effect transistor (TFET) considering the source and the drain depletion regions. Analytical expressions are derived for the surface potential, electric field and the band-to-band generation rate. The drain current is obtained by numerically integrating the generation rate across the entire device. The model is able to predict the ambipolar current as well as the effects of drain voltage in the saturation region. The model uses a semi-empirical approach to capture the transition between the linear and the saturation regions, which gives infinitely differentiable transfer characteristics. This model includes the effects of drain voltage, gate metal work function, oxide thickness, and silicon film thickness. The model is also shown to be scalable down to a channel length of 20 nm. The accuracy of the model is confirmed by a comparison with 2-D numerical simulations.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130529533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Localized morphological change-induced degradation in organic electronic devices 有机电子器件中局部形态变化引起的降解
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151168
A. K. Jagdish, G. Pavankumar, Praveen C Ramamurthy, D. Mahapatra, G. Hegde
{"title":"Localized morphological change-induced degradation in organic electronic devices","authors":"A. K. Jagdish, G. Pavankumar, Praveen C Ramamurthy, D. Mahapatra, G. Hegde","doi":"10.1109/ICEMELEC.2014.7151168","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151168","url":null,"abstract":"In this paper we report on the degradation mechanism of an organic diode which causes rupturing of the top electrode film and the conducting polymer film. Organic electronic diodes were fabricated and tested at various applied voltages. Analysis of characterization data shows that the degradation is caused by a combination of localized morphological changes due to localized Joule heating, thermal stresses, stresses due to electric fields and bending stress. A modeling approach is proposed to determine the contribution of each of the above stresses and to attempt to estimate a regime of applied voltage, temperatures and polymer film thickness within which the device operates without this form of performance degradation.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120926953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High field effect mobility of 10,000 cm2/V-s and 5,000 cm2/V-s in undoped and doped monolayer graphene-based transistors 在未掺杂和掺杂的单层石墨烯基晶体管中，高场效应迁移率为10,000 cm2/V-s和5,000 cm2/V-s
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151204
Premlata Yadav, P. Srivastava, Subhasis Ghosh
{"title":"High field effect mobility of 10,000 cm2/V-s and 5,000 cm2/V-s in undoped and doped monolayer graphene-based transistors","authors":"Premlata Yadav, P. Srivastava, Subhasis Ghosh","doi":"10.1109/ICEMELEC.2014.7151204","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151204","url":null,"abstract":"Graphene is considered one of the most promising materials for future electronics as it exhibits high charge carrier mobility. The prerequisite for the development of graphene-based electronics is to dope graphene effectively. In general, graphene-based field effect transistors show unwanted and uncontrolled p-type behavior in the ambient. It is required to dope graphene controllably without affecting its spectacular electronic properties. The prospect of chemical doping and its use in electronic and sensing applications has been extensively studied. Here we report an easy way to achieve doping in graphene layers during chemical exfoliation by choosing the solvent for exfoliation of different dielectric values appropriately. Field effect transistors fabricated on exfoliated graphene show carrier mobilities up to 10,000 cm2/V-s in undoped and 5,000 cm2/V-s in doped monolayers.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123102097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes 了解低导通电压DACz聚合物二极管中电子能带的演化
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151179
S. Swathi, K. Ranjith, Praveen C Ramamurthy
{"title":"Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes","authors":"S. Swathi, K. Ranjith, Praveen C Ramamurthy","doi":"10.1109/ICEMELEC.2014.7151179","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151179","url":null,"abstract":"In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4×10-6 m2/V.s, which is relatively high for a polymer material.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131047166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
One-dimensional photonic crystal reflector using silicon-rich silicon nitride and silicon oxynitride multilayers for solar cells 利用富硅氮化硅和氮化氧硅多层材料的太阳能电池一维光子晶体反射器
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151217
A. Soman, A. Antony
{"title":"One-dimensional photonic crystal reflector using silicon-rich silicon nitride and silicon oxynitride multilayers for solar cells","authors":"A. Soman, A. Antony","doi":"10.1109/ICEMELEC.2014.7151217","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151217","url":null,"abstract":"Light trapping forms an important aspect of solar cells to increase the short circuit current density, which has a direct impact on the efficiency of the solar cell. In this paper we have used a one-dimensional photonic crystal which acts as a Bragg reflector. The dielectric photonic crystal consists of 6 bilayers of silicon nitride and silicon oxynitride deposited at a low temperature of 200oC using radio frequency plasma-enhanced chemical vapor deposition. The deposition conditions of the materials used and the characterization by FTIR, XPS, Raman spectroscopy and XRD are presented. Finally, the application of this material to make a near-100% broadband reflector in the wavelength range of 800 to 1200 nm using 70 nm silicon nitride and 140 nm silicon oxynitride stacks has been demonstrated.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130862791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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