利用MOVPE技术原位生长ga催化AlGaAs纳米结构的研究

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151186

R. Bag, J. Lohani, R. Tyagi, D. K. Pandya, R. Singh

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引用次数: 0

摘要

利用MOVPE原位生长了ga催化的AlGaAs纳米结构。利用FESEM技术研究了生长温度对纳米结构形状、尺寸、锥度和空间分布的影响。通过微pl测量来分析纳米结构的光学质量。通过PL谱的多峰拟合估计铝成分约为13%。

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Study of growth of in situ Ga-catalyzed AlGaAs nanostructures using MOVPE technique

In situ Ga-catalyzed AlGaAs nanostructures have been grown by MOVPE. The effect of growth temperature on the shape, size, tapering, and spatial distribution of nanostructures has been investigated using the FESEM technique. Micro-PL measurements have been conducted to analyze the optical quality of the nanostructures. Aluminum composition of around 13% has been estimated by multiple peak-fitting of the PL spectrum.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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