Nanogap electrode formation by sacrificial layer technique

S. Dhariwal, R. Prajesh, A. Agarwal
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Abstract

This paper presents a controlled lateral etching-based technique for realizing nanogap structures. These structures have applications in different bio-medical/ biochemical sensors. The sensitivity of such sensors depends on the gap size. The method method uses single mask lithography, followed by etching for the first electrode material and lift-off for the second electrode material. Controlled under-etching of the first metal layer defines the gap between two electrodes. Aluminum (0.7 μm) as metal one and titanium (0.2 μm) as metal two was used for fabricating nano-gap electrodes. Gap of 90 nm was achieved using the present technique.
牺牲层法制备纳米间隙电极
本文提出了一种基于可控横向蚀刻的纳米间隙结构实现技术。这些结构在不同的生物医学/生化传感器中有应用。这种传感器的灵敏度取决于间隙的大小。该方法采用单掩模光刻,然后对第一电极材料进行蚀刻,对第二电极材料进行剥离。第一金属层的控制下蚀刻确定了两个电极之间的间隙。采用铝(0.7 μm)作为金属一,钛(0.2 μm)作为金属二制备纳米间隙电极。采用该方法可实现90 nm的间隙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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