Localized morphological change-induced degradation in organic electronic devices

A. K. Jagdish, G. Pavankumar, Praveen C Ramamurthy, D. Mahapatra, G. Hegde
{"title":"Localized morphological change-induced degradation in organic electronic devices","authors":"A. K. Jagdish, G. Pavankumar, Praveen C Ramamurthy, D. Mahapatra, G. Hegde","doi":"10.1109/ICEMELEC.2014.7151168","DOIUrl":null,"url":null,"abstract":"In this paper we report on the degradation mechanism of an organic diode which causes rupturing of the top electrode film and the conducting polymer film. Organic electronic diodes were fabricated and tested at various applied voltages. Analysis of characterization data shows that the degradation is caused by a combination of localized morphological changes due to localized Joule heating, thermal stresses, stresses due to electric fields and bending stress. A modeling approach is proposed to determine the contribution of each of the above stresses and to attempt to estimate a regime of applied voltage, temperatures and polymer film thickness within which the device operates without this form of performance degradation.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper we report on the degradation mechanism of an organic diode which causes rupturing of the top electrode film and the conducting polymer film. Organic electronic diodes were fabricated and tested at various applied voltages. Analysis of characterization data shows that the degradation is caused by a combination of localized morphological changes due to localized Joule heating, thermal stresses, stresses due to electric fields and bending stress. A modeling approach is proposed to determine the contribution of each of the above stresses and to attempt to estimate a regime of applied voltage, temperatures and polymer film thickness within which the device operates without this form of performance degradation.
有机电子器件中局部形态变化引起的降解
本文报道了一种有机二极管的降解机制,该降解机制导致了二极管顶部电极膜和导电聚合物膜的破裂。制作了有机电子二极管,并在不同的外加电压下进行了测试。表征数据分析表明,降解是由局部焦耳加热引起的局部形态变化、热应力、电场应力和弯曲应力共同引起的。提出了一种建模方法,以确定上述每种应力的贡献,并试图估计施加电压、温度和聚合物薄膜厚度的范围,在该范围内设备运行时不会出现这种形式的性能退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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