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A novel FinFET with dynamic threshold voltage 一种具有动态阈值电压的新型FinFET
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151218
Selwin Kumar Pushpadhas, D. Nair, Amit Gupta
{"title":"A novel FinFET with dynamic threshold voltage","authors":"Selwin Kumar Pushpadhas, D. Nair, Amit Gupta","doi":"10.1109/ICEMELEC.2014.7151218","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151218","url":null,"abstract":"Higher on-current (I<sub>dsat</sub>) and lower off-current (I<sub>off</sub>) can be achieved through dynamic threshold voltage (V<sub>th</sub>) in MOSFETs. The change in V<sub>th</sub> with gate bias is usually achieved through the body effect by connecting the gate terminal to the substrate in MOSFETs with heavily doped substrates. In this paper, we report the presence of dynamic V<sub>th</sub> even in FinFETs with undoped channels. In this case, the change in V<sub>th</sub> is due to modulation of the cross-sectional area of current flow. For the same I<sub>off</sub>, more than 10% increase in I<sub>dsat</sub> can be achieved in the proposed structure.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"641 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133101894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suitability of sol-gel derived amorphous and crystalline compositions of In-Ga-Zn oxide for thin film transistors 溶胶-凝胶衍生的In-Ga-Zn氧化物非晶和结晶成分在薄膜晶体管中的适用性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151154
Ishan Choudhary, Deepak
{"title":"Suitability of sol-gel derived amorphous and crystalline compositions of In-Ga-Zn oxide for thin film transistors","authors":"Ishan Choudhary, Deepak","doi":"10.1109/ICEMELEC.2014.7151154","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151154","url":null,"abstract":"The present work focusses on thin film transistor (TFT) devices with polycrystalline and amorphous Indium-Gallium-Zinc-Oxide (IGZO) thin films fabricated using solution processing. Since it is easier to vary composition through solution processing, we have investigated suitability of various chemical compositions for TFT applications. We have found that a common composition In:Ga:Zn::1:1:1 used in sputtering leads to a crystalline film through solution processing route; the sputtered film is amorphous. Thus, we have systematically varied the composition to obtain amorphous phase with composition 3:1:5. Further, we report that both Zn/Ga and In/Ga ratio should be high in order to obtain amorphous films, but still some Ga must remain present to obtain acceptable resistivity. Thin film transistors fabricated using these compositions shows n-channel enhancement mode operation. The saturation mobility is found to be highest (0.39 cm2/V-s) for the amorphous composition with on-off ratio of the order of ~103.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114371902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and simulation of a high performance dopingless p-tunnel field effect transistor 高性能无掺杂p隧道场效应晶体管的设计与仿真
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151160
F. Bashir, S. Loan
{"title":"Design and simulation of a high performance dopingless p-tunnel field effect transistor","authors":"F. Bashir, S. Loan","doi":"10.1109/ICEMELEC.2014.7151160","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151160","url":null,"abstract":"In this paper, we propose a novel p-type dopingless tunnel field effect transistor (DL-p-TFET). The proposed DL-p-TFET device does not use conventional ion implantation or diffusion for realizing source and drain regions; these regions are created by using metals of different work function, a charge plasma concept. It has been observed that by optimizing the source and gate electrode gap (Lgap, S) and oxide thickness under source electrode (Toxide, S) in the proposed DL-p-TFET device, better performance can be obtained in comparison to the conventional doped p-TFET (D-p-TFET). The 2D simulation study has shown a significant improvement in ON current (Ion), cutoff frequency (fT) and subthreshold slope (SS) in the proposed device in comparison to the conventional D-p-TFET. It is found observed that the ION, fT and SS in the proposed DL-p-TFET are increased by 156%, 2.5% and 133%, respectively, in comparison to the conventional D-p-TFET. Since the proposed device is dopingless, it is free from random dopant fluctuations issues and can be processed at low temperatures.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114381363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Large chiro-optical effect in stacked chiral metamaterials 堆叠性手性超材料的大手光学效应
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151185
Gangadhar W. Bandewad, Greshma C Nair, Ambarish Ghosh
{"title":"Large chiro-optical effect in stacked chiral metamaterials","authors":"Gangadhar W. Bandewad, Greshma C Nair, Ambarish Ghosh","doi":"10.1109/ICEMELEC.2014.7151185","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151185","url":null,"abstract":"Plasmonic nanostructures in chiral geometries are suitable candidates for various device applications pertaining to optical polarization. These devices can show large chiro-optical effects, implying a strongly differential response to right and left circularly polarized light. In general, three-dimensional plasmonic structures show larger optical activity, but are typically not suitable for wafer-scale fabrication. As an alternate strategy, we have considered the optical response of stacked planar chiral geometries, which were found to exhibit very large chiro-optical response. Further, the plasmonic chirality of such stacked metamaterials can be tuned in the visible, by simply varying the thickness of the stack. This novel design of layered achiral metamaterials will be easier to fabricate than standard three dimensional geometries, and is suitable for various photonic device applications requiring polarization control.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116201049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrostatic forces in fixed-fixed microbeams under direct and fringing field effects 固定-固定微梁在直接场和边缘场作用下的静电力
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151140
P. N. Kambali, A. Pandey
{"title":"Electrostatic forces in fixed-fixed microbeams under direct and fringing field effects","authors":"P. N. Kambali, A. Pandey","doi":"10.1109/ICEMELEC.2014.7151140","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151140","url":null,"abstract":"We propose simple approximate expressions for capacitance and electrostatic force for fixed-fixed beam-based MEMS/NEMS devices subjected to direct electrostatic and fringing field effects. The configuration that are considered for study are fixed-fixed beam and bottom electrode, fixed-fixed beam and side electrode, and a combination of beam, bottom electrode and side electrode. The expressions are evaluated based on the numerical result obtained using FEA analysis in COMSOL software. The accuracy of the proposed formulae is compared with available literature. The formulae proposed in this paper are valid for a wide operating range and they can also be used for array applications.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132740091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
To expound superconductive quantum transport for C20 fullerene with disparate electrode material 探讨不同电极材料下C20富勒烯的超导量子输运
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151164
Milanpreet Kaur, R. Sawhney, D. Engles
{"title":"To expound superconductive quantum transport for C20 fullerene with disparate electrode material","authors":"Milanpreet Kaur, R. Sawhney, D. Engles","doi":"10.1109/ICEMELEC.2014.7151164","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151164","url":null,"abstract":"In this paper we expounded the optimal electrode material for fullerenes, being explored for the molecular electronics based applications. We scrutinized the largest curvature fullerene, C20 stringed to three different electrode materials viz. Copper, Silver and Gold using semi-empirical approach for this two probe modelling. We perceived that the transport phenomena for copper and silver electrodes throughout entire negative bias range were almost comparable with the similar set of response to the applied potential. However, for positive bias range, the transport phenomenon for Gold and Copper electrodes was comparable. Moreover, Silver Electrode configuration had least Conduction Gap with symmetric I-V curves. This leads to the conclusion that Silver electrodes offer more stability and linearity in its characteristics providing us with another ideal option for semiinfinite electrodes in nano world apart from Gold electrodes.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133547295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode 基于si3n4钝化AlGaN/GaN肖特基二极管的气体传感器综合建模
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151192
Subhashis Das, S. Majumder, R. Kumar, M. K. Mahata, S. M. Dinara, D. Biswas
{"title":"Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode","authors":"Subhashis Das, S. Majumder, R. Kumar, M. K. Mahata, S. M. Dinara, D. Biswas","doi":"10.1109/ICEMELEC.2014.7151192","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151192","url":null,"abstract":"A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si3N4 passivation layer, is mainly utilized to model the device. The simulation of Schottky diode has been performed in the TCAD tool and I-V curves are generated. From the I-V curves, 54% response has been recorded in presence of 500 ppm gas and at biasing voltage of 0.95 Volts.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116755900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication and characterization of zinc oxide nanowires for high-sensitivity sensing applications 用于高灵敏度传感的氧化锌纳米线的制备与表征
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151162
Brince Paul, C. Sharma, S. Singh, S. Vanjari
{"title":"Fabrication and characterization of zinc oxide nanowires for high-sensitivity sensing applications","authors":"Brince Paul, C. Sharma, S. Singh, S. Vanjari","doi":"10.1109/ICEMELEC.2014.7151162","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151162","url":null,"abstract":"This paper presents synthesis and characterization of wurtzite-type zinc oxide (ZnO) mesoporous nanowires by a simple, cost-effective, electrospinning technique. The n-type semiconducting nanowires of ZnO were obtained from polyacrylonitrile (PAN) and zinc acetate (ZnAc) in N, N-dimethylformamide (DMF) after calcination treatment at 5500C for 1 hour. The as-synthesized ZnO nanowires were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDX) and photoluminescence spectroscopy. This paper also presents the fabrication of a single zinc oxide (ZnO) nano wire that is precisely positioned between two electrodes. Using a patterned gold microelectrode array fabricated on oxidized silicon wafer as a collector, the polymer nanocomposite wire can be placed between two gold electrodes. Controlled synthesis of a single nanowire between two electrodes is a candidate for high sensitivity sensing applications in the areas of gas sensing and biosensing.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125771472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Traditional graphene and junctionless carbon nanotube field effect transistor for cholesterol sensing 传统的石墨烯和无结碳纳米管场效应晶体管用于胆固醇传感
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151205
M. Abdul Barik, M. Sarma, J. Dutta
{"title":"Traditional graphene and junctionless carbon nanotube field effect transistor for cholesterol sensing","authors":"M. Abdul Barik, M. Sarma, J. Dutta","doi":"10.1109/ICEMELEC.2014.7151205","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151205","url":null,"abstract":"The present study compares two single-gated field effect transistors (FETs) for cholesterol detection. One is traditional graphene-FET and the other is junctionless carbon nanotube (CNT) FET. Both the FETs have been fabricated using the electrochemical deposition (ECD) technique. Cholesterol response has been recorded in a glass pot containing phosphate buffer saline (PBS) using digital multimeter. Response study implies that junctionless CNTFET shows improved sensitivity of 87 μA/mM, higher than the sensitivity of traditional graphene-FET (18 μA/mM). Limit of detection (LoD) has been found to be 0.25mM for JLCNTFET and 1.4mM for graphene FET. Furthermore, the fabrication of junctionless CNTFET is simpler and can be easily done using minimal instrumentation.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125624011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric optimization for inkjet-printed TIPS-pentacene organic thin-film transistors 喷墨印刷tips -五苯有机薄膜晶体管的介电介质优化
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151176
S. Singh, Y. N. Mohapatra
{"title":"Dielectric optimization for inkjet-printed TIPS-pentacene organic thin-film transistors","authors":"S. Singh, Y. N. Mohapatra","doi":"10.1109/ICEMELEC.2014.7151176","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151176","url":null,"abstract":"We have fabricated inkjet-printed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistor by optimizing a cross-linked poly-4-vinylphenol (PVP) dielectric on glass substrate. The quality and integrity of the polymer dielectric has been studied for different weight percent of PVP and the poly(melamine-co-formaldehyde) as a cross-linking agent (CLA) in propylene glycol methyl ether acetate (PGMEA), so as to minimize the dielectric leakage current. The dielectric constant is measured for different weight percent of the solution through capacitance measurements of metal-insulator-metal structures. The typical dielectric leakage current density ranges between 10-9 to 10-7 Ampere/mm2 for various weight percent and the dielectric capacitance ranges from 6 nF/cm2 to 21 nF/cm2. The electrical characteristics of the OTFT exhibits the saturation field effect mobility 2 × 10-3 cm2/V-s, the current ON/OFF ratio of ~102, a threshold voltage of 1.52 Volt.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"303 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122800939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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